Enhancement-Mode Ga2 O3 Vertical Transistors With Breakdown Voltage >1 kV Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ...
IEEE Electron Device Letters 39 (6), 869-872, 2018
288 2018 β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
Apl Materials 10 (2), 2022
235 2022 Field-Plated Ga2 O3 Trench Schottky Barrier Diodes With a BV2 / of up to 0.95 GW/cm2 W Li, K Nomoto, Z Hu, D Jena, HG Xing
IEEE Electron Device Letters 41 (1), 107-110, 2019
232 2019 Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors Z Hu, K Nomoto, W Li, Z Zhang, N Tanen, QT Thieu, K Sasaki, A Kuramata, ...
Applied Physics Letters 113 (12), 2018
158 2018 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of< 1 μA/cm2 W Li, Z Hu, K Nomoto, Z Zhang, JY Hsu, QT Thieu, K Sasaki, A Kuramata, ...
Applied Physics Letters 113 (20), 2018
146 2018 Ultrathin ferroic HfO2 –ZrO2 superlattice gate stack for advanced transistors SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ...
Nature 604 (7904), 65-71, 2022
134 2022 Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes W Li, D Saraswat, Y Long, K Nomoto, D Jena, HG Xing
Applied Physics Letters 116 (19), 2020
115 2020 2.44 kV Ga2 O3 vertical trench Schottky barrier diodes with very low reverse leakage current W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu, K Sasaki, A Kuramata, ...
2018 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2018
104 2018 Design and realization of GaN trench junction-barrier-Schottky-diodes W Li, K Nomoto, M Pilla, M Pan, X Gao, D Jena, HG Xing
IEEE Transactions on Electron Devices 64 (4), 1635-1641, 2017
94 2017 Single and multi-fin normally-off Ga2 O3 vertical transistors with a breakdown voltage over 2.6 kV W Li, K Nomoto, Z Hu, T Nakamura, D Jena, HG Xing
2019 IEEE International Electron Devices Meeting (IEDM), 12.4. 1-12.4. 4, 2019
91 2019 GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ...
IEEE Electron Device Letters 41 (5), 689-692, 2020
86 2020 1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing
IEEE Electron Device Letters 38 (8), 1071-1074, 2017
75 2017 Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes W Li, K Nomoto, Z Hu, D Jena, HG Xing
Applied Physics Express 12 (6), 061007, 2019
71 2019 Activation of buried p-GaN in MOCVD-regrown vertical structures W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, J Xie, M Pilla, ...
Applied Physics Letters 113 (6), 2018
57 2018 Development of GaN vertical trench-MOSFET with MBE regrown channel W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, M Pilla, D Jena, ...
IEEE Transactions on Electron Devices 65 (6), 2558-2564, 2018
52 2018 1.6 kV Vertical Ga2 O3 FinFETs With Source-Connected Field Plates and Normally-off Operation Z Hu, K Nomoto, W Li, R Jinno, T Nakamura, D Jena, H Xing
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
48 2019 Guiding principles for trench Schottky barrier diodes based on ultrawide bandgap semiconductors: a case study in Ga₂O₃ W Li, K Nomoto, Z Hu, D Jena, HG Xing
IEEE Transactions on Electron Devices 67 (10), 3938-3947, 2020
45 2020 Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ...
Applied Physics Letters 119 (6), 2021
39 2021 Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study in β-Ga2O3 W Li, K Nomoto, D Jena, HG Xing
Applied Physics Letters 117 (22), 2020
37 2020 Trapping and Detrapping Mechanisms in β -Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements E Fabris, C De Santi, A Caria, W Li, K Nomoto, Z Hu, D Jena, HG Xing, ...
IEEE Transactions on Electron Devices 67 (10), 3954-3959, 2020
33 2020