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Takao Shimizu
Takao Shimizu
Verified email at nims.go.jp
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Year
Stabilizing the ferroelectric phase in doped hafnium oxide
M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ...
Journal of Applied Physics 118 (7), 2015
5292015
The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film
T Shimizu, K Katayama, T Kiguchi, A Akama, TJ Konno, O Sakata, ...
Scientific reports 6 (1), 32931, 2016
2542016
Impact of mechanical stress on ferroelectricity in (Hf0. 5Zr0. 5) O2 thin films
T Shiraishi, K Katayama, T Yokouchi, T Shimizu, T Oikawa, O Sakata, ...
Applied Physics Letters 108 (26), 2016
2362016
Growth of epitaxial orthorhombic YO1. 5-substituted HfO2 thin film
T Shimizu, K Katayama, T Kiguchi, A Akama, TJ Konno, H Funakubo
Applied Physics Letters 107 (3), 2015
1602015
Effects of deposition conditions on the ferroelectric properties of (Al1− xScx) N thin films
S Yasuoka, T Shimizu, A Tateyama, M Uehara, H Yamada, M Akiyama, ...
Journal of Applied Physics 128 (11), 2020
1542020
Contribution of oxygen vacancies to the ferroelectric behavior of Hf0. 5Zr0. 5O2 thin films
T Shimizu, T Yokouchi, T Oikawa, T Shiraishi, T Kiguchi, A Akama, ...
Applied Physics Letters 106 (11), 2015
852015
Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0. 5Zr0. 5O2 thin film on Ir electrode
T Shimizu, T Yokouchi, T Shiraishi, T Oikawa, PSSR Krishnan, ...
Japanese Journal of Applied Physics 53 (9S), 09PA04, 2014
852014
Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films
T Shimizu, T Mimura, T Kiguchi, T Shiraishi, T Konno, Y Katsuya, ...
Applied Physics Letters 113 (21), 2018
792018
Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films
K Katayama, T Shimizu, O Sakata, T Shiraishi, S Nakamura, T Kiguchi, ...
Journal of Applied Physics 119 (13), 2016
792016
Ferroelectricity in YO1. 5-HfO2 films around 1 μm in thickness
T Mimura, T Shimizu, H Funakubo
Applied Physics Letters 115 (3), 2019
722019
Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices
K Katayama, T Shimizu, O Sakata, T Shiraishi, S Nakamura, T Kiguchi, ...
Applied Physics Letters 109 (11), 2016
722016
Ferroelectricity in wurtzite structure simple chalcogenide
H Moriwake, A Konishi, T Ogawa, K Fujimura, CAJ Fisher, A Kuwabara, ...
Applied Physics Letters 104 (24), 2014
652014
Epitaxial growth of metastable multiferroic AlFeO3 film on SrTiO3 (111) substrate
Y Hamasaki, T Shimizu, H Taniguchi, T Taniyama, S Yasui, M Itoh
Applied Physics Letters 104 (8), 2014
562014
Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films
T Mimura, T Shimizu, H Uchida, O Sakata, H Funakubo
Applied Physics Letters 113 (10), 2018
552018
Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0. 5Zr0. 5) O2 thin films deposited on various substrates
T Shiraishi, K Katayama, T Yokouchi, T Shimizu, T Oikawa, O Sakata, ...
Materials Science in Semiconductor Processing 70, 239-245, 2017
502017
Mechanism for suppression of ferroelectricity in Cd 1− x Ca x TiO 3
H Taniguchi, HP Soon, T Shimizu, H Moriwake, YJ Shan, M Itoh
Physical Review B 84 (17), 174106, 2011
472011
Effects of heat treatment and in situ high-temperature X-ray diffraction study on the formation of ferroelectric epitaxial Y-doped HfO2 film
T Mimura, T Shimizu, T Kiguchi, A Akama, TJ Konno, Y Katsuya, O Sakata, ...
Japanese Journal of Applied Physics 58 (SB), SBBB09, 2019
392019
Mechanism of polarization switching in wurtzite-structured zinc oxide thin films
A Konishi, T Ogawa, CAJ Fisher, A Kuwabara, T Shimizu, S Yasui, M Itoh, ...
Applied Physics Letters 109 (10), 2016
392016
Comparative study of phase transitions in BaTiO3 thin films grown on (001)-and (110)-oriented SrTiO3 substrate
T Shimizu, D Suwama, H Taniguchi, T Taniyama, M Itoh
Journal of Physics: Condensed Matter 25 (13), 132001, 2013
392013
Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO2 Thin Film Capacitors
P Buragohain, A Erickson, T Mimura, T Shimizu, H Funakubo, ...
Advanced Functional Materials 32 (9), 2108876, 2022
372022
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