Hiroshi Funakubo
Hiroshi Funakubo
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Dimensionality-Controlled Insulator-Metal Transition and Correlated Metallic State in Transition Metal Oxides (, 2, and )
SJ Moon, H Jin, KW Kim, WS Choi, YS Lee, J Yu, G Cao, A Sumi, ...
Physical review letters 101 (22), 226402, 2008
Stabilizing the ferroelectric phase in doped hafnium oxide
M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ...
Journal of Applied Physics 118 (7), 2015
Large remanent polarization of epitaxial thin films grown by metalorganic chemical vapor deposition
T Kojima, T Sakai, T Watanabe, H Funakubo, K Saito, M Osada
Applied Physics Letters 80 (15), 2746-2748, 2002
Crystal structure and ferroelectric properties of rare-earth substituted BiFeO3 thin films
H Uchida, R Ueno, H Funakubo, S Koda
Journal of applied physics 100 (1), 2006
The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film
T Shimizu, K Katayama, T Kiguchi, A Akama, TJ Konno, O Sakata, ...
Scientific reports 6 (1), 32931, 2016
High-κ dielectric nanofilms fabricated from titania nanosheets
M Osada, Y Ebina, H Funakubo, S Yokoyama, T Kiguchi, K Takada, ...
Adv. Mater 18 (8), 1023-1027, 2006
Impact of mechanical stress on ferroelectricity in (Hf0. 5Zr0. 5) O2 thin films
T Shiraishi, K Katayama, T Yokouchi, T Shimizu, T Oikawa, O Sakata, ...
Applied Physics Letters 108 (26), 2016
Effect of cosubstitution of La and V in thin films on the low-temperature deposition
T Watanabe, H Funakubo, M Osada, Y Noguchi, M Miyayama
Applied physics letters 80 (1), 100-102, 2002
Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric
L You, Y Zhang, S Zhou, A Chaturvedi, SA Morris, F Liu, L Chang, ...
Science advances 5 (4), eaav3780, 2019
Approach for enhanced polarization of polycrystalline bismuth titanate films by cosubstitution
H Uchida, H Yoshikawa, I Okada, H Matsuda, T Iijima, T Watanabe, ...
Applied physics letters 81 (12), 2229-2231, 2002
Cation distribution and structural instability in Bi4-xLaxTi3O12
M Osada, M Tada, M Kakihana, T Watanabe, H Funakubo
Japanese Journal of Applied Physics 40 (9S), 5572, 2001
Robust high-κ response in molecularly thin perovskite nanosheets
M Osada, K Akatsuka, Y Ebina, H Funakubo, K Ono, K Takada, T Sasaki
Acs Nano 4 (9), 5225-5232, 2010
Engineered Interfaces of Artificial Perovskite Oxide Superlattices via Nanosheet Deposition Process
BW Li, M Osada, TC Ozawa, Y Ebina, K Akatsuka, R Ma, H Funakubo, ...
ACS nano 4 (11), 6673-6680, 2010
Growth of epitaxial orthorhombic YO1. 5-substituted HfO2 thin film
T Shimizu, K Katayama, T Kiguchi, A Akama, TJ Konno, H Funakubo
Applied Physics Letters 107 (3), 2015
Effects of deposition conditions on the ferroelectric properties of (Al1− xScx) N thin films
S Yasuoka, T Shimizu, A Tateyama, M Uehara, H Yamada, M Akiyama, ...
Journal of Applied Physics 128 (11), 2020
Highly-conducting indium tin-oxide transparent films fabricated by spray CVD using ethanol solution of indium (III) chloride and tin (II) chloride
Y Sawada, C Kobayashi, S Seki, H Funakubo
Thin solid films 409 (1), 46-50, 2002
Dependence of electrical properties of epitaxial Pb (Zr, Ti) O3 thick films on crystal orientation and Zr∕(Zr+ Ti) ratio
S Yokoyama, Y Honda, H Morioka, S Okamoto, H Funakubo, T Iijima, ...
Journal of Applied Physics 98 (9), 2005
Epitaxial BiFeO3 thin films fabricated by chemical solution deposition
SK Singh, YK Kim, H Funakubo, H Ishiwara
Applied physics letters 88 (16), 2006
Large remanent polarization of -based thin films modified by the site engineering technique
T Watanabe, T Kojima, T Sakai, H Funakubo, M Osada, Y Noguchi, ...
Journal of applied physics 92 (3), 1518-1521, 2002
Ferroelectricity in doped hafnium oxide: materials, properties and devices
U Schroeder, CS Hwang, H Funakubo
Woodhead Publishing, 2019
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