Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs GG Shahidi, B Davari, TJ Bucelot, PA Ronsheim, PJ Coane, S Pollack, ... IEEE Electron Device Letters 14 (8), 409-411, 1993 | 102 | 1993 |
A resonant global clock distribution for the cell broadband engine processor SC Chan, PJ Restle, TJ Bucelot, JS Liberty, S Weitzel, JM Keaty, B Flachs, ... IEEE Journal of Solid-State Circuits 44 (1), 64-72, 2008 | 80 | 2008 |
Degradation of bipolar transistors under high current stress at 300 K RA Wachnik, TJ Bucelot, GP Li Journal of applied physics 63 (9), 4734-4740, 1988 | 67 | 1988 |
Analysis of silicide process defects by non-contact electron-beam charging K Jenkins, PD Agnello, TJ Bucelot 30th Annual Proceedings Reliability Physics, 304-308, 1992 | 54 | 1992 |
Electron Devices W Lu, P Xie, CM Lieber IEEE Transactions on 55 (11), 2859, 2008 | 46 | 2008 |
A highly latchup-immune 1-µm CMOS technology fabricated with 1-MeV ion implantation and self-aligned TiSi2 FSJ Lai, LK Wang, Y Taur, JYC Sun, KE Petrillo, SK Chicotka, EJ Petrillo, ... IEEE transactions on electron devices 33 (9), 1308-1320, 1986 | 44 | 1986 |
Resonant tunneling of holes through silicon barriers U Gennser, VP Kesan, SS Iyer, TJ Bucelot, ES Yang Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990 | 42 | 1990 |
Loop-based interconnect modeling and optimization approach for multigigahertz clock network design X Huang, P Restle, T Bucelot, Y Cao, TJ King, C Hu IEEE Journal of Solid-State Circuits 38 (3), 457-463, 2003 | 40 | 2003 |
Fabrication of high performance 512K static‐random access memories in 0.25 μm complementary metal–oxide semiconductor technology using x‐ray lithography R Viswanathan, D Seeger, A Bright, T Bucelot, A Pomerene, K Petrillo, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 39 | 1993 |
A High Performance 0.25/spl mu/m CMOS Shahidi, Warnock, Acovic, Agnello, Blair, Bucelot, Burghartz, Crabbe, ... Symposium 1993 on VLSI Technology, 93-94, 1993 | 37 | 1993 |
CPAM: A common power analysis methodology for high-performance VLSI design JS Neely, HH Chen, SG Walker, J Venuto, TJ Bucelot IEEE 9th Topical Meeting on Electrical Performance of Electronic Packaging …, 2000 | 32 | 2000 |
5.3 Wide-frequency-range resonant clock with on-the-fly mode changing for the POWER8TM microprocessor P Restle, D Shan, D Hogenmiller, Y Kim, A Drake, J Hibbeler, T Bucelot, ... 2014 IEEE International Solid-State Circuits Conference Digest of Technical …, 2014 | 31 | 2014 |
Enhanced performance of accumulation mode 0.5 mu m CMOS/SOI operated at 300 K and 85 K LK Wang, J Seliskar, T Bucelot, A Edenfeld, N Haddad International Electron Devices Meeting 1991 [Technical Digest], 679-682, 1991 | 30 | 1991 |
Temperature dependent transport measurements on strained Si/Si1−xGex resonant tunneling devices U Gennser, VP Kesan, SS Iyer, TJ Bucelot, ES Yang Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991 | 26 | 1991 |
A 12-ns low-temperature DRAM WH Henkels, NCC Lu, W Hwang, TV Rajeevakumar, RL Franch, ... IEEE transactions on electron devices 36 (8), 1414-1422, 1989 | 25 | 1989 |
A 4-Mb low-temperature DRAM WH Henkels, DS Wen, RL Mohler, RL Franch, TJ Bucelot, CW Long, ... IEEE journal of solid-state circuits 26 (11), 1519-1529, 1991 | 23 | 1991 |
Synchronizing global clocks in 3D stacks of integrated circuits by shorting the clock network TJ Bucelot, LT Pang, PJ Restle US Patent 8,525,569, 2013 | 19 | 2013 |
Photomagnetism of the triplet state of coronene CJ O'Connor, E Sinn, TJ Bucelot, BS Deaver Jr Chemical Physics Letters 74 (1), 27-31, 1980 | 17 | 1980 |
Variable resistance switch for wide bandwidth resonant global clock distribution TJ Bucelot, AJ Drake, RA Groves, JD Hibbeler, YI Kim, LT Pang, ... US Patent 8,704,576, 2014 | 16 | 2014 |
Changing resonant clock modes TJ Bucelot, A Drake, JD Friedrich, JD Hibbeler, LT Pang, WR Reohr, ... US Patent 8,736,342, 2014 | 15 | 2014 |