Title
Cited by
Cited by
Year
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
SP Voinigescu, MC Maliepaard, JL Showell, GE Babcock, D Marchesan, ...
IEEE journal of solid-state circuits 32 (9), 1430-1439, 1997
4391997
VBIC95, the vertical bipolar inter-company model
CC McAndrew, JA Seitchik, DF Bowers, M Dunn, M Foisy, I Getreu, ...
IEEE Journal of Solid-State Circuits 31 (10), 1476-1483, 1996
3441996
Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ...
CRC press, 2018
2962018
SiGe HBT technology: Future trends and TCAD-based roadmap
M Schröter, T Rosenbaum, P Chevalier, B Heinemann, SP Voinigescu, ...
Proceedings of the IEEE 105 (6), 1068-1086, 2016
2052016
Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz
SHM Jen, CC Enz, DR Pehlke, M Schroter, BJ Sheu
IEEE Transactions on Electron Devices 46 (11), 2217-2227, 1999
2051999
Compact hierarchical bipolar transistor modeling with HICUM
M Schröter, A Chakravorty
World Scientific, 2010
1452010
Compact hierarchical bipolar transistor modeling with HICUM
M Schroter, A Chakravorty
World Scientific, 2010
124*2010
Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications
P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ...
Proceedings of the IEEE 105 (6), 1035-1050, 2017
1122017
Carbon nanotube FET technology for radio-frequency electronics: State-of-the-art overview
M Schroter, M Claus, P Sakalas, M Haferlach, D Wang
IEEE Journal of the Electron Devices Society 1 (1), 9-20, 2013
1022013
Physical and electrical performance limits of high-speed SiGeC HBTs—Part I: Vertical scaling
M Schroter, G Wedel, B Heinemann, C Jungemann, J Krause, P Chevalier, ...
IEEE Transactions on Electron Devices 58 (11), 3687-3696, 2011
1012011
Physics-based minority charge and transit time modeling for bipolar transistors
M Schroter, TY Lee
IEEE Transactions on electron devices 46 (2), 288-300, 1999
931999
A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part II: Two-dimensional model and experimental results
HM Rein, M Schroter
IEEE transactions on electron devices 34 (8), 1752-1761, 1987
901987
High-frequency application of MOS compact models and their development for scalable RF model libraries
DR Pehlke, M Schroter, A Burstein, M Matloubian, MF Chang
Proceedings of the IEEE 1998 Custom Integrated Circuits Conference (Cat. No …, 1998
831998
Physics-and process-based bipolar transistor modeling for integrated circuit design
M Schroter, HM Rein, W Rabe, R Reimann, HJ Wassener, A Koldehoff
IEEE Journal of Solid-State Circuits 34 (8), 1136-1149, 1999
751999
On the origin of noise in polysilicon emitter bipolar transistors
MJ Deen, SL Rumyantsev, M Schroter
Journal of Applied Physics 85 (2), 1192-1195, 1999
751999
A generalized integral charge-control relation and its application to compact models for silicon-based HBT's
M Schroter, M Friedrich, HM Rein
IEEE Transactions on electron devices 40 (11), 2036-2046, 1993
711993
Simulation and modeling of the low-frequency base resistance of bipolar transistors and its dependence on current and geometry
M Schroter
IEEE transactions on electron devices 38 (3), 538-544, 1991
661991
Toward linearity in Schottky barrier CNTFETs
S Mothes, M Claus, M Schröter
IEEE Transactions on Nanotechnology 14 (2), 372-378, 2015
652015
Towards an optimal contact metal for CNTFETs
A Fediai, DA Ryndyk, G Seifert, S Mothes, M Claus, M Schröter, ...
Nanoscale 8 (19), 10240-10251, 2016
632016
Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions
HM Rein, M Schröter
Solid-state electronics 34 (3), 301-308, 1991
611991
The system can't perform the operation now. Try again later.
Articles 1–20