| Deposition of metal films using alane-based precursors X Lu, D Thompson, JW Anthis, M Chang, S Ganguli, W Tang, S Gandikota, ... US Patent 8,927,059, 2015 | 435 | 2015 |
| Methods for depositing fluorine/carbon-free conformal tungsten X Fu, S Gandikota, AV Gelatos, A Noori, M Chang, D Thompson, ... US Patent 9,230,815, 2016 | 430 | 2016 |
| Methods of fabricating dielectric films from metal amidinate precursors S Hung, A Noori, D Thompson, Y Senzaki US Patent 9,269,574, 2016 | 315 | 2016 |
| Devices including metal-silicon contacts using indium arsenide films and apparatus and methods KZ Ahmed, P Gopalraja, A Noori, M Chang US Patent 9,441,298, 2016 | 310 | 2016 |
| HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation K Joshi, S Hung, S Mukhopadhyay, V Chaudhary, N Nanaware, ... 2013 IEEE international reliability physics symposium (IRPS), 4C. 2.1-4C. 2.10, 2013 | 64 | 2013 |
| System and method for light socket adaptation AM Noori, GWY Kwan, K Rohling, KD Wolfe, LW Wolfe, S Arnold US Patent 9,526,153, 2016 | 59 | 2016 |
| Method of forming non-volatile memory having charge trap layer with compositional gradient M Balseanu, V Zubkov, LQ Xia, A Noori, R Arghavani, DR Witty, ... US Patent 7,816,205, 2010 | 56 | 2010 |
| Manufacturable Processes for32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances AM Noori, M Balseanu, P Boelen, A Cockburn, S Demuynck, S Felch, ... IEEE transactions on electron devices 55 (5), 1259-1264, 2008 | 52 | 2008 |
| Materials issues for the heterogeneous integration of III-V compounds: Exfoliation and layer transfer S Hayashi, M Goorsky, A Noori, D Bruno Journal of the Electrochemical Society 153 (12), G1011, 2006 | 44 | 2006 |
| Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition WH Kim, MK Kim, WJ Maeng, J Gatineau, V Pallem, C Dussarrat, A Noori, ... Journal of The Electrochemical Society 158 (8), G169, 2011 | 43 | 2011 |
| The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition I Oh, MK Kim, J Lee, CW Lee, C Lansalot-Matras, W Noh, J Park, A Noori, ... Applied surface science 287, 349-354, 2013 | 41 | 2013 |
| Atomic layer deposition methods for metal gate electrodes Y Lei, S Gandikota, X Fu, W Tang, A Noori US Patent 9,082,702, 2015 | 33 | 2015 |
| Method of forming a non-volatile memory having a silicon nitride charge trap layer M Balseanu, V Zubkov, LQ Xia, A Noori, R Arghavani, DR Witty, ... US Patent 8,252,653, 2012 | 27 | 2012 |
| Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers TS Yoon, J Liu, AM Noori, MS Goorsky, YH Xie Applied Physics Letters 87 (1), 2005 | 25 | 2005 |
| Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology A Veloso, SA Chew, Y Higuchi, LÅ Ragnarsson, E Simoen, T Schram, ... Japanese Journal of Applied Physics 52 (4S), 04CA02, 2013 | 23 | 2013 |
| Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition WH Kim, MK Kim, IK Oh, WJ Maeng, T Cheon, SH Kim, A Noori, ... Journal of the American Ceramic Society 97 (4), 1164-1169, 2014 | 20 | 2014 |
| Uv curing of pecvd-deposited sacrificial polymer films for air-gap ild A Noori, F Schmitt, A Lakshmanan, BH Kim, R Arghavani US Patent App. 12/017,879, 2008 | 19 | 2008 |
| Full-field EUV and immersion lithography integration in 0.186μm2 FinFET 6T-SRAM cell A Veloso, S Demuynck, M Ercken, AM Goethals, M Demand, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 18 | 2008 |
| Methods for depositing fluorine/carbon-free conformal tungsten X Fu, S Gandikota, AV Gelatos, A Noori, M Chang, D Thompson, ... US Patent 9,601,339, 2017 | 16 | 2017 |
| Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing ST Srinivasan, AM Noori, DK Carlson US Patent 9,443,728, 2016 | 16 | 2016 |
