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Moncef Kadi
Moncef Kadi
Associate Professor, ESIGELEC
Verified email at esigelec.fr
Title
Cited by
Cited by
Year
Characterization and modeling of the susceptibility of integrated circuits to conducted electromagnetic disturbances up to 1 GHz
I Chahine, M Kadi, E Gaboriaud, A Louis, B Mazari
IEEE Transactions on Electromagnetic Compatibility 50 (2), 285-293, 2008
772008
Characterization of electromagnetic fields close to microwave devices using electric dipole probes
L Bouchelouk, Z Riah, D Baudry, M Kadi, A Louis, B Mazari
International Journal of RF and Microwave Computer‐Aided Engineering: Co …, 2008
452008
A 3-D near-field modeling approach for electromagnetic interference prediction
H Shall, Z Riah, M Kadi
IEEE Transactions on Electromagnetic Compatibility 56 (1), 102-112, 2013
362013
Determination of the compaction of hot mix asphalt using high-frequency electromagnetic methods
C Fauchard, B Li, L Laguerre, B Heritier, N Benjelloun, M Kadi
NDT & E International 60, 40-51, 2013
342013
Plane wave spectrum theory applied to near-field measurements for electromagnetic compatibility investigations
D Baudry, M Kadi, Z Riah, C Arcambal, Y Vives-Gilabert, A Louis, ...
IET Science, Measurement & Technology 3 (1), 72-83, 2009
322009
Modeling IC snapback characteristics under electrostatic discharge stress
A Ramanujan, M Kadi, J Trémenbert, F Lafon, B Mazari
IEEE transactions on electromagnetic compatibility 51 (4), 901-908, 2009
232009
A novel approach for modeling near-field coupling with PCB traces
H Shall, Z Riah, M Kadi
IEEE Transactions on Electromagnetic Compatibility 56 (5), 1194-1201, 2014
202014
Robustness of 4H-SiC 1200 V Schottky diodes under high electrostatic discharge like human body model stresses: An in-depth failure analysis
P Denis, P Dherbécourt, O Latry, C Genevois, F Cuvilly, M Brault, M Kadi
Diamond and related materials 44, 62-70, 2014
162014
Failure analysis of aluminum electrolytic capacitors based on electrical and physicochemical characterizations
C Lachkar, M Kadi, JP Kouadio, M Presle, S El Yousfi, JF Goupy, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 5C-1.1-5C-1.7, 2017
152017
Post-processing of electric field measurements to calibrate a near-field dipole probe
Z Riah, D Baudry, M Kadi, A Louis, B Mazari
IET science, measurement & technology 5 (2), 29-36, 2011
142011
Broad band PCB probes for near field measurements
N Sivaraman, F Ndagljlmana, M Kadi, Z Riah
2017 International Symposium on Electromagnetic Compatibility-EMC EUROPE, 1-5, 2017
122017
High-frequency characterization and modeling of EMI filters under temperature variations
F Hami, H Boulzazen, M Kadi
IEEE Transactions on Electromagnetic Compatibility 59 (6), 1906-1915, 2017
122017
Prediction of 3D-near field coupling between a toroïdal inductor and a transmission line
H Shall, Z Riah, M Kadi
2013 IEEE International Symposium on Electromagnetic Compatibility, 651-656, 2013
122013
Evolution of CV and IV characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests
JZ Fu, F Fouquet, M Kadi, P Dherbécourt
Microelectronics Reliability 88, 652-655, 2018
112018
Using neural networks for predicting the integrated circuits susceptibility to conducted electromagnetic disturbances
I Chahine, M Kadi, E Gaboriaud, A Louis, B Mazari
2007 18th International Zurich Symposium on Electromagnetic Compatibility, 13-16, 2007
112007
Modelling of integrated circuit susceptibility to conducted electromagnetic disturbances using neural networks theory
I Chahine, M Kadi, E Gaboriaud, C Maziere, A Louis, B Mazari
Electronics Letters 42 (18), 1, 2006
92006
Experimental study of 600V GaN transistor under the short-circuit aging tests
JZ Fu, F Fouquet, M Kadi, P Dherbécourt
2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON), 249-253, 2018
82018
Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance
A Alaeddine, M Kadi, K Daoud, H Maanane, P Eudeline
International Journal of Microwave and Wireless Technologies 1 (6), 475-482, 2009
82009
Effects of electromagnetic near-field stress on SiGe HBT’s reliability
A Alaeddine, M Kadi, K Daoud, B Mazari
Microelectronics Reliability 49 (9-11), 1029-1032, 2009
82009
Failure investigation of packaged SiC-diodes after thermal storage in extreme operating condition
O Latry, P Dherbecourt, P Denis, F Cuvilly, M Kadi
Engineering Failure Analysis 83, 185-192, 2018
72018
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