Yuhao Zhang
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The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
Two-dimensional MoS 2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting
Xu Zhang, Jesús Grajal, Jose Luis Vazquez-Roy, Ujwal Radhakrishna, Xiaoxue ...
Nature, 2019
Gallium nitride vertical power devices on foreign substrates: a review and outlook
Y Zhang, A Dadgar, T Palacios
Journal of Physics D: Applied Physics 51 (27), 273001, 2018
High-performance GaN vertical fin power transistors on bulk GaN substrates
M Sun, Y Zhang, X Gao, T Palacios
IEEE Electron Device Letters 38 (4), 509-512, 2017
High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
Lili Yu, Ahmad Zubair, Elton J. G. Santos, Xu Zhang, Yuxuan Lin, Yuhao Zhang ...
Nano Letters 15 (8), 4928–4934, 2015
GaN-on-Si Vertical Schottky and pn Diodes
Y Zhang, M Sun, D Piedra, M Azize, X Zhang, T Fujishima, T Palacios
IEEE Electron Device Letters 35 (6), 618 - 620, 2014
Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors
Y Zhang, M Sun, Z Liu, D Piedra, HS Lee, F Gao, T Fujishima, T Palacios
IEEE Transactions on Electron Devices 60 (7), 2224-2230, 2013
Vertical Ga2O3 Schottky Barrier Diodes with Small-Angle Beveled Field Plates: a Baliga’s Figure-of-Merit of 0.6 GW/cm2
Noah Allen, Ming Xiao, Xiaodong Yan, Kohei Sasaki, Marko J. Tadjer, Jiahui ...
IEEE Electron Device Letters, 2019
A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3
Joseph A. Spencer, Alyssa L. Mock, Alan G. Jacobs, Mathias Schubert, Yuhao ...
Applied Physics Reviews 9 (1), 011315, 2022
Design, Modeling and Fabrication of CVD Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics
Lili Yu, Dina El-Damak, Ujwal Radhakrishna, Xi Ling, Ahmad Zubair, Yuxuan ...
Nano Letters 16 (10), 6349–6356, 2016
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Yuhao Zhang, Zhihong Liu, Marko J Tadjer, Min Sun, Daniel Piedra ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
Koon Hoo Teo, Yuhao Zhang, Nadim Chowdhury, Shaloo Rakheja, Rui Ma, Qingyun ...
Journal of Applied Physics 130 (16), 160902, 2021
Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ...
Electron Devices, IEEE Transactions on 62 (7), 2155 - 2161, 2015
Materials and processing issues in vertical GaN power electronics
J Hu, Y Zhang, M Sun, D Piedra, N Chowdhury, T Palacios
Materials Science in Semiconductor Processing 78, 75-84, 2018
Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit
Y Zhang, M Sun, J Perozek, Z Liu, A Zubair, D Piedra, N Chowdhury, ...
IEEE Electron Device Letters 40 (1), 75-78, 2019
Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
Y Zhang, M Sun, SJ Joglekar, T Fujishima, T Palacios
Applied Physics Letters 103 (3), 2013
p-Channel GaN Transistor based on p-GaN/AlGaN/GaN on Si
N Chowdhury, J Lemettinen, Q Xie, Y Zhang, NS Rajput, P Xiang, ...
IEEE Electron Device Letters, 2019
Surge-Energy and Overvoltage Ruggedness of p-Gate GaN HEMTs
Ruizhe Zhang, Joseph Kozak, Ming Xiao, Jingcun Liu, Yuhao Zhang
IEEE Transactions on Power Electronics, 2020
1200 V GaN vertical fin power field-effect transistors
Y Zhang, M Sun, D Piedra, J Hu, Z Liu, Y Lin, X Gao, K Shepard, ...
Electron Devices Meeting (IEDM), 2017 IEEE International, 9.2. 1-9.2. 4, 2017
Trench formation and corner rounding in vertical GaN power devices
Yuhao Zhang, Min Sun, Zhihong Liu, Daniel Piedra, Jie Hu, Xiang Gao, Tomás ...
Applied Physics Letters 110 (19), 193506, 2017
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