| Excellent Selector Characteristics of Nanoscale for High-Density Bipolar ReRAM Applications M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ... Electron Device Letters, IEEE, 1-3, 2011 | 348 | 2011 |
| Streptococcus pneumoniae serotype 19A in children, South Korea EH Choi, SH Kim, BW Eun, SJ Kim, NH Kim, J Lee, HJ Lee Emerging infectious diseases 14 (2), 275, 2008 | 342 | 2008 |
| A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories MJ Lee, S Seo, DC Kim, SE Ahn, DH Seo, IK Yoo, IG Baek, DS Kim, ... Advanced Materials 19 (1), 73-76, 2007 | 277 | 2007 |
| Evidence for production and measurement of T Aaltonen, B Álvarez González, S Amerio, D Amidei, A Anastassov, ... Physical Review D—Particles, Fields, Gravitation, and Cosmology 84 (3), 031104, 2011 | 247 | 2011 |
| ATLAS measurements of the properties of jets for boosted particle searches G Aad, B Abbott, J Abdallah, S Abdel Khalek, AA Abdelalim, O Abdinov, ... Physical Review D—Particles, Fields, Gravitation, and Cosmology 86 (7), 072006, 2012 | 209 | 2012 |
| TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application J Shin, I Kim, KP Biju, M Jo, J Park, J Lee, S Jung, W Lee, S Kim, S Park, ... Journal of Applied Physics 109 (3), 2011 | 177 | 2011 |
| High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ... ACS nano 6 (9), 8166-8172, 2012 | 171 | 2012 |
| Electrode dependence of resistance switching in polycrystalline NiO films S Seo, MJ Lee, DC Kim, SE Ahn, BH Park, YS Kim, IK Yoo, IS Byun, ... Applied Physics Letters 87 (26), 2005 | 157 | 2005 |
| Lehá r, J., Kryukov, GV, Sonkin, D., et al.(2012) J Barretina, G Caponigro, N Stransky, K Venkatesan, AA Margolin, S Kim, ... The Cancer Cell Line Encyclopedia enables predictive modelling of anticancer …, 0 | 146 | |
| Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications J Lee, J Shin, D Lee, W Lee, S Jung, M Jo, J Park, KP Biju, S Kim, S Park, ... Electron Devices Meeting (IEDM), 2010 IEEE International, 19.5. 1-19.5. 4, 2010 | 135 | 2010 |
| Ultrathin (<10nm) Nb2O5/NbO2hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ... 2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012 | 121 | 2012 |
| Multibit Operation of -Based ReRAM by Schottky Barrier Height Engineering J Park, KP Biju, S Jung, W Lee, J Lee, S Kim, S Park, J Shin, H Hwang Electron Device Letters, IEEE 32 (4), 476-478, 2011 | 116 | 2011 |
| Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays W Lee, J Park, J Shin, J Woo, S Kim, G Choi, S Jung, S Park, D Lee, ... 2012 Symposium on VLSI Technology (VLSIT), 37-38, 2012 | 98 | 2012 |
| Resistive switching characteristics and mechanism of thermally grown WOx thin films KP Biju, X Liu, M Siddik, S Kim, J Shin, I Kim, A Ignatiev, H Hwang Journal of Applied Physics 110, 064505, 2011 | 97 | 2011 |
| Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ... Microelectronic Engineering 107, 33-36, 2013 | 75 | 2013 |
| Complementary resistive switching in niobium oxide-based resistive memory devices X Liu, SM Sadaf, S Park, S Kim, E Cha, D Lee, GY Jung, H Hwang IEEE electron device letters 34 (2), 235-237, 2013 | 67 | 2013 |
| Self-Selective Characteristics of Nanoscale Devices for High-Density ReRAM Applications M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ... IEEE electron device letters 33 (5), 718-720, 2012 | 66 | 2012 |
| Effect of Scaling -Based RRAMs on Their Resistive Switching Characteristics S Kim, KP Biju, M Jo, S Jung, J Park, J Lee, W Lee, J Shin, S Park, ... Electron Device Letters, IEEE, 1-3, 2011 | 64 | 2011 |
| Survival advantage of peritoneal dialysis relative to hemodialysis in the early period of incident dialysis patients: a nationwide prospective propensity-matched study in Korea JY Choi, HM Jang, J Park, YS Kim, SW Kang, CW Yang, NH Kim, JH Cho, ... PloS one 8 (12), e84257, 2013 | 59 | 2013 |
| Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0. 7Ca0. 3MnO3 device for nonvolatile memory applications D Seong, J Park, N Lee, M Hasan, S Jung, H Choi, J Lee, M Jo, W Lee, ... Electron Devices Meeting (IEDM), 2009 IEEE International, 1-4, 2009 | 54 | 2009 |
Wootae LeeSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST)Verified email at gist.ac.kr
