| Microscopic scale characterization and modeling of transistor degradation under HC stress YM Randriamihaja, V Huard, X Federspiel, A Zaka, P Palestri, D Rideau, ... Microelectronics Reliability 52 (11), 2513-2520, 2012 | 53 | 2012 |
| New hot carrier degradation modeling reconsidering the role of EES in ultra short n-channel MOSFETs YM Randriamihaja, X Federspiel, V Huard, A Bravaix, P Palestri 2013 IEEE International Reliability Physics Symposium (IRPS), XT. 1.1-XT. 1.5, 2013 | 41 | 2013 |
| Impact of the gate-stack change from 40nm node SiON to 28nm High-K Metal Gate on the Hot-Carrier and Bias Temperature damage A Bravaix, YM Randriamihaja, V Huard, D Angot, X Federspiel, W Arfaoui, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 2D. 6.1-2D. 6.9, 2013 | 32 | 2013 |
| Off State Incorporation into the 3 energy mode Device Lifetime Modeling for advanced 40nm CMOS node A Bravaix, C Guerin, D Goguenheim, V Huard, D Roy, C Besset, S Renard, ... 2010 IEEE International Reliability Physics Symposium, 55-64, 2010 | 31 | 2010 |
| Hot carrier degradation: From defect creation modeling to their impact on NMOS parameters YM Randriamihaja, A Zaka, V Huard, M Rafik, D Rideau, D Roy, A Bravaix, ... 2012 IEEE International Reliability Physics Symposium (IRPS), XT. 15.1-XT. 15.4, 2012 | 26 | 2012 |
| Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model D Garetto, YM Randriamihaja, A Zaka, D Rideau, A Schmid, H Jaouen, ... Solid-state electronics 71, 74-79, 2012 | 24 | 2012 |
| Modeling stressed MOS oxides using a multiphonon-assisted quantum approach—Part II: transient effects D Garetto, YM Randriamihaja, D Rideau, A Zaka, A Schmid, Y Leblebici, ... IEEE transactions on electron devices 59 (3), 621-630, 2012 | 14 | 2012 |
| From defects creation to circuit reliability–A bottom-up approach V Huard, F Cacho, YM Randriamihaja, A Bravaix Microelectronic engineering 88 (7), 1396-1407, 2011 | 14 | 2011 |
| From atoms to circuits: Theoretical and empirical modeling of hot carrier degradation W McMahon, Y Mamy-Randriamihaja, B Vaidyanathan, T Nigam, ... Hot Carrier Degradation in Semiconductor Devices, 3-27, 2014 | 12 | 2014 |
| Multiple microscopic defects characterization methods to improve macroscopic degradation modeling of MOSFETs YM Randriamihaja, A Bravaix, V Huard, D Rideau, M Rafik, D Roy 2010 IEEE International Integrated Reliability Workshop Final Report, 61-66, 2010 | 9 | 2010 |
| AC analysis of defect cross sections using non-radiative MPA quantum model D Garetto, YM Randriamihaja, A Zaka, D Rideau, A Schmid, H Jaouem, ... Ulis 2011 Ultimate Integration on Silicon, 1-4, 2011 | 8 | 2011 |
| Small signal analysis of electrically-stressed oxides with Poisson-Schroedinger based multiphonon capture model D Garetto, YM Randriamihaja, D Rideau, E Dornel, FC William, A Schmid, ... 2010 14th International Workshop on Computational Electronics, 1-4, 2010 | 8 | 2010 |
| Modeling stressed MOS oxides using a multiphonon-assisted quantum approach—Part I: Impedance analysis D Garetto, YM Randriamihaja, D Rideau, A Zaka, A Schmid, Y Leblebici, ... IEEE transactions on electron devices 59 (3), 610-620, 2012 | 7 | 2012 |
| Assessing intrinsic and extrinsic end-of-life risk using functional SRAM wafer level testing YM Randriamihaja, W McMahon, S Balasubramanian, T Nigam, ... 2015 IEEE International Reliability Physics Symposium, 6A. 5.1-6A. 5.4, 2015 | 6 | 2015 |
| New insights into gate-dielectric breakdown by electrical characterization of interfacial and oxide defects with reverse modeling methodology YM Randriamihaja, D Garetto, V Huard, D Rideau, D Roy, M Rafik, ... 2012 IEEE International Reliability Physics Symposium (IRPS), GD. 7.1-GD. 7.5, 2012 | 6 | 2012 |
| Mosfet's hot carrier degradation characterization and modeling at a microscopic scale YM Randriamihaja, A Zaka, V Huard, M Rafik, D Rideau, D Roy, A Bravaix 2011 International Reliability Physics Symposium, XT. 5.1-XT. 5.3, 2011 | 6 | 2011 |
| Oxide defects generation modeling and impact on BD understanding YM Randriamihaja, V Huard, A Zaka, S Haendler, X Federspiel, M Rafik, ... 2011 International Reliability Physics Symposium, GD. 3.1-GD. 3.4, 2011 | 5 | 2011 |
| New insights into NBTI reliability in UTBOX-FDSOI PMOS transistors D Angot, D Rideau, A Bravaix, F Monsieur, YM Randriamihaja, V Huard 2012 IEEE International Integrated Reliability Workshop Final Report, 70-73, 2012 | 4 | 2012 |
| Bias-Induced Healing of Failures in Advanced SRAM Arrays RW Mann, W McMahon, YM Randriamihaja, Y Song, AA Kallianpur, S Xie, ... IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25 (2), 660-669, 2016 | 2 | 2016 |
| Comparing defect characterization techniques with non-radiative multiphonon charge trapping model: AC analysis, trap-assisted-tunneling and charge pumping D Garetto, YM Randriamihaja, D Rideau, A Schmid, H Jaouen Journal of Computational Electronics 11, 225-237, 2012 | 2 | 2012 |
