| Properties of RF magnetron sputtered cadmium–tin–oxide and indium–tin–oxide thin films W Wohlmuth, I Adesida Thin Solid Films 479 (1-2), 223-231, 2005 | 106 | 2005 |
| Buried and bulk channel finFET and method of making the same W Wohlmuth US Patent App. 11/073,330, 2006 | 68 | 2006 |
| Modeling of InGaAs MSM photodetector for circuit-level simulation A Xiang, W Wohlmuth, P Fay, SM Kang, I Adesida Journal of lightwave technology 14 (5), 716-723, 1996 | 52 | 1996 |
| A high-speed ITO-InAlAs-InGaAs Schottky-barrier photodetector WA Wohlmuth, JW Seo, P Fay, C Caneau, I Adesida IEEE Photonics Technology Letters 9 (10), 1388-1390, 1997 | 51 | 1997 |
| Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same WA Wohlmuth US Patent 7,449,728, 2008 | 47 | 2008 |
| InGaAs metal‐semiconductor‐metal photodetectors with engineered Schottky barrier heights WA Wohlmuth, M Arafa, A Mahajan, P Fay, I Adesida Applied physics letters 69 (23), 3578-3580, 1996 | 42 | 1996 |
| 15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 µm wavelength P Fay, W Wohlmuth, C Caneau, I Adesida Electronics Letters 31 (9), 755-756, 1995 | 41 | 1995 |
| 18.5-GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55-μm wavelength communication systems P Fay, W Wohlmuth, C Caneau, I Adesida IEEE Photonics Technology Letters 8 (5), 679-681, 1996 | 38 | 1996 |
| Depletion-mode field effect transistor based electrostatic discharge protection circuit JY Li, WA Wohlmuth, S Muthukrishnan, CR Iversen, N Peachey US Patent 7,881,029, 2011 | 35 | 2011 |
| Producing reference voltages using transistors R Benelbar, W Wohlmuth US Patent 7,368,980, 2008 | 31 | 2008 |
| Dark current suppression in GaAs metal-semiconductor-metal photodetectors WA Wohlmuth, P Fay, I Adesida IEEE Photonics Technology Letters 8 (8), 1061-1063, 1996 | 31 | 1996 |
| E-/D-pHEMT technology for wireless components WA Wohlmuth, W Liebl, V Juneja, R Hallgren, W Struble, D Farias, ... IEEE Compound Semiconductor Integrated Circuit Symposium, 2004., 115-118, 2004 | 30 | 2004 |
| Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same WA Wohlmuth US Patent 7,655,546, 2010 | 28 | 2010 |
| Low dark current, long wavelength metal-semiconductor-metal photodetectors WA Wohlmuth, P Fay, C Caneau, I Adesida Electronics Letters 32 (3), 249-250, 1996 | 25 | 1996 |
| High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers WA Wohlmuth, P Fay, K Vaccaro, EA Martin, I Adesida IEEE Photonics Technology Letters 9 (5), 654-656, 1997 | 24 | 1997 |
| Low dark current photodetector I Adesida, W Wohlmuth, M Arafa, P Fay US Patent 5,880,482, 1999 | 23 | 1999 |
| Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers P Fay, M Arafa, WA Wohlmuth, C Caneau, S Chandrasekhar, I Adesida Journal of lightwave technology 15 (10), 1871-1879, 1997 | 20 | 1997 |
| Advances in back-side via etching of SiC for GaN device applications A Barker, K Riddell, H Ashraf, D Thomas, CH Chen, YF Wei, IT Cho, ... CS MANTECH Conference, 13-16, 2013 | 19 | 2013 |
| A comparative study of integrated photoreceivers using MSM/HEMT and PIN/HEMT technologies P Fay, W Wohlmuth, A Mahajan, C Caneau, S Chanrasekhar, I Adesida IEEE Photonics Technology Letters 10 (4), 582-584, 1998 | 19 | 1998 |
| Enhancement mode MOSFET and depletion mode FET on a common group III-V substrate WA Wohlmuth US Patent 7,952,150, 2011 | 15 | 2011 |
