Eike Linn
Cited by
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Complementary resistive switches for passive nanocrossbar memories
E Linn, R Rosezin, C Kügeler, R Waser
Nature materials 9 (5), 403-406, 2010
Nanobatteries in redox-based resistive switches require extension of memristor theory
I Valov, E Linn, S Tappertzhofen, S Schmelzer, J van den Hurk, F Lentz, ...
Nature communications 4 (1), 1771, 2013
Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations
E Linn, R Rosezin, S Tappertzhofen, U Böttger, R Waser
Nanotechnology 23 (30), 305205, 2012
The programmable logic-in-memory (PLiM) computer
PE Gaillardon, L Amarú, A Siemon, E Linn, R Waser, A Chattopadhyay, ...
2016 Design, Automation & Test in Europe Conference & Exhibition (DATE), 427-432, 2016
Realization of boolean logic functionality using redox‐based memristive devices
A Siemon, T Breuer, N Aslam, S Ferch, W Kim, J Van Den Hurk, V Rana, ...
Advanced functional materials 25 (40), 6414-6423, 2015
A complementary resistive switch-based crossbar array adder
A Siemon, S Menzel, R Waser, E Linn
IEEE journal on emerging and selected topics in circuits and systems 5 (1 …, 2015
Integrated complementary resistive switches for passive high-density nanocrossbar arrays
R Rosezin, E Linn, L Nielen, C Kügeler, R Bruchhaus, R Waser
IEEE Electron Device Letters 32 (2), 191-193, 2010
Applicability of well-established memristive models for simulations of resistive switching devices
E Linn, A Siemon, R Waser, S Menzel
IEEE Transactions on Circuits and Systems I: Regular Papers 61 (8), 2402-2410, 2014
Crossbar logic using bipolar and complementary resistive switches
R Rosezin, E Linn, C Kugeler, R Bruchhaus, R Waser
IEEE Electron Device Letters 32 (6), 710-712, 2011
Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM
C Kügeler, R Rosezin, E Linn, R Bruchhaus, R Waser
Applied Physics A 102, 791-809, 2011
Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
J Van den Hurk, E Linn, H Zhang, R Waser, I Valov
Nanotechnology 25 (42), 425202, 2014
Multistate memristive tantalum oxide devices for ternary arithmetic
W Kim, A Chattopadhyay, A Siemon, E Linn, R Waser, V Rana
Scientific reports 6 (1), 36652, 2016
Nanobattery effect in RRAMs—implications on device stability and endurance
S Tappertzhofen, E Linn, U Böttger, R Waser, I Valov
IEEE electron device letters 35 (2), 208-210, 2013
Memory devices: Energy–space–time tradeoffs
VV Zhirnov, RK Cavin, S Menzel, E Linn, S Schmelzer, D Bräuhaus, ...
Proceedings of the IEEE 98 (12), 2185-2200, 2010
A HfO2‐Based Complementary Switching Crossbar Adder
T Breuer, A Siemon, E Linn, S Menzel, R Waser, V Rana
Advanced Electronic Materials 1 (10), 1500138, 2015
Simulation of TaOx-based complementary resistive switches by a physics-based memristive model
A Siemon, S Menzel, A Marchewka, Y Nishi, R Waser, E Linn
2014 IEEE international symposium on circuits and systems (ISCAS), 1420-1423, 2014
Capacity based nondestructive readout for complementary resistive switches
S Tappertzhofen, E Linn, L Nielen, R Rosezin, F Lentz, R Bruchhaus, ...
Nanotechnology 22 (39), 395203, 2011
Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures
J van den Hurk, V Havel, E Linn, R Waser, I Valov
Scientific Reports 3 (1), 2856, 2013
Stateful three-input logic with memristive switches
A Siemon, R Drabinski, MJ Schultis, X Hu, E Linn, A Heittmann, R Waser, ...
Scientific reports 9 (1), 14618, 2019
An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing
O Kavehei, E Linn, L Nielen, S Tappertzhofen, E Skafidas, I Valov, ...
Nanoscale 5 (11), 5119-5128, 2013
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