Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
194 2012 AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 at 0.5 V R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ...
IEEE electron device letters 33 (3), 363-365, 2012
163 2012 Methods and apparatus for vertical bit line structures in three-dimensional nonvolatile memory Z Guangle
US Patent 9,595,530, 2017
149 2017 Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ...
IEEE Electron Device Letters 33 (5), 655-657, 2012
134 2012 InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and Ratio Near G Zhou, Y Lu, R Li, Q Zhang, Q Liu, T Vasen, H Zhu, JM Kuo, T Kosel, ...
IEEE Electron Device Letters 33 (6), 782-784, 2012
105 2012 Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ...
IEEE Electron Device Letters 32 (11), 1516-1518, 2011
71 2011 Low voltage tunnel field-effect transistor (TFET) and method of making same AC Seabaugh, P Fay, X Huili Grace, Z Guangle, LU Yeqing, MA Wistey, ...
US Patent 8,796,733, 2014
50 2014 InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field R Li, Y Lu, SD Chae, G Zhou, Q Liu, C Chen, M Shahriar Rahman, ...
physica status solidi c 9 (2), 389-392, 2012
50 2012 Multiple junction thin film transistor Z Guangle, MC Wu, YT Chen
US Patent 9,653,617, 2017
40 2017 Vertical transistor and local interconnect structure YT Chen, Z Guangle, C Petti
US Patent 9,583,615, 2017
35 2017 IEDM Tech. Dig. J Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
IEDM Tech. Dig, 773, 2012
34 2012 Self-aligned InAs/Al0.45 Ga0.55 Sb vertical tunnel FETs G Zhou, Y Lu, R Li, Q Zhang, W Hwang, Q Liu, T Vasen, H Zhu, J Kuo, ...
69th Device Research Conference, 205-206, 2011
21 2011 Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy Q Zhang, G Zhou, HG Xing, AC Seabaugh, K Xu, H Sio, OA Kirillov, ...
Applied Physics Letters 100 (10), 2012
18 2012 Resistive memory device having sidewall spacer electrode and method of making thereof MC Wu, C Pan, Z Guangle, T Kumar
US Patent 9,806,256, 2017
16 2017 Methods and apparatus for three-dimensional nonvolatile memory Z Guangle, Y Li, Y Chen, T Kumar
US Patent 9,768,180, 2017
9 2017 Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark Z Jiang, Y He, G Zhou, T Kubis, HG Xing, G Klimeck
71st Device Research Conference, 145-146, 2013
5 2013 Self-Aligned In0. 53Ga0. 47As/InAs/InP Vertical Tunnel FETs G Zhou, Y Lu, R Li, W Hwang, Q Zhang, Q Liu, T Vasen, C Chen, H Zhu, ...
Proc. Int. Conf. Compound Semicond. Manuf. Technol, 339, 2011
5 2011 Gate-Recessed Vertical InAs/GaSb TFETs with Record High ION of 180 μA/μm at VDS= 0.5 V Z Guangle, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
IEEE Int. Electron Devices Meet, 777-780, 2012
3 2012 III-V tunnel field-effect transistors A Seabaugh, SD Chae, P Fay, WS Hwang, T Kosel, R Li, Q Liu, Y Lu, ...
ECS Transactions 41 (7), 227, 2011
3 2011 Tunnel FETs with tunneling normal to the gate HG Xing, G Zhou, M Li, Y Lu, R Li, M Wistey, P Fay, D Jena, A Seabaugh
2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-1, 2013
1 2013