Matteo Bosi
Matteo Bosi
IMEM - CNR, Area delle Scienze 37A, 43124 Parma, Italy
Verified email at - Homepage
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The real structure of ε-Ga 2 O 3 and its relation to κ-phase
I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ...
CrystEngComm 19 (11), 1509-1516, 2017
The potential of III‐V semiconductors as terrestrial photovoltaic devices
M Bosi, C Pelosi
Progress in Photovoltaics: Research and Applications 15 (1), 51-68, 2007
Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire
F Mezzadri, G Calestani, F Boschi, D Delmonte, M Bosi, R Fornari
Inorganic chemistry 55 (22), 12079-12084, 2016
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD
F Boschi, M Bosi, T Berzina, E Buffagni, C Ferrari, R Fornari
Journal of Crystal Growth 443, 25-30, 2016
Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a review
M Bosi
RSC Advances 5 (92), 75500-75518, 2015
Review on atomic layer deposition and applications of oxide thin films
JS Ponraj, G Attolini, M Bosi
Critical reviews in solid state and materials sciences 38 (3), 203-233, 2013
Germanium: Epitaxy and its applications
M Bosi, G Attolini
Progress in Crystal Growth and Characterization of Materials 56 (3-4), 146-174, 2010
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ...
Materials chemistry and physics 205, 502-507, 2018
Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions
M Bosi, P Mazzolini, L Seravalli, R Fornari
Journal of Materials Chemistry C 8 (32), 10975-10992, 2020
Thermal stability of ε-Ga2O3 polymorph
R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ...
Acta Materialia 140, 411-416, 2017
A study of Indium incorporation efficiency in InGaN grown by MOVPE
M Bosi, R Fornari
Journal of Crystal Growth 265 (3-4), 434-439, 2004
Exciton and trion in few-layer MoS2: Thickness-and temperature-dependent photoluminescence
S Golovynskyi, I Irfan, M Bosi, L Seravalli, OI Datsenko, I Golovynska, B Li, ...
Applied Surface Science 515, 146033, 2020
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation
A Lohrmann, S Castelletto, JR Klein, T Ohshima, M Bosi, M Negri, ...
Applied Physics Letters 108 (2), 2016
In situ TEM study of κ→ β and κ→ γ phase transformations in Ga2O3
I Cora, Z Fogarassy, R Fornari, M Bosi, A Rečnik, B Pécz
Acta Materialia 183, 216-227, 2020
The electronic structure of ε-Ga2O3
M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ...
APL Materials 7 (2), 2019
Si and Sn doping of ε-Ga2O3 layers
A Parisini, A Bosio, V Montedoro, A Gorreri, A Lamperti, M Bosi, G Garulli, ...
APL Materials 7 (3), 2019
Synthesis and characterization of 3C–SiC nanowires
G Attolini, F Rossi, M Bosi, BE Watts, G Salviati
Journal of Non-Crystalline Solids 354 (47-51), 5227-5229, 2008
Integration of single-photon emitters into 3C-SiC microdisk resonators
A Lohrmann, TJ Karle, VK Sewani, A Laucht, M Bosi, M Negri, ...
ACS Photonics 4 (3), 462-468, 2017
Growth and characterization of 3C-SiC films for micro electro mechanical systems (MEMS) applications
M Bosi, BE Watts, G Attolini, C Ferrari, C Frigeri, G Salviati, A Poggi, ...
Crystal growth & design 9 (11), 4852-4859, 2009
Probing the nanoscale light emission properties of a CVD-grown MoS 2 monolayer by tip-enhanced photoluminescence
Y Okuno, O Lancry, A Tempez, C Cairone, M Bosi, F Fabbri, M Chaigneau
Nanoscale 10 (29), 14055-14059, 2018
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