| Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs G Roy, AR Brown, F Adamu-Lema, S Roy, A Asenov IEEE Transactions on Electron Devices 53 (12), 3063-3070, 2006 | 336 | 2006 |
| Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells B Cheng, S Roy, G Roy, F Adamu-Lema, A Asenov Solid-State Electronics 49 (5), 740-746, 2005 | 105 | 2005 |
| A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ... Solid-State Electronics 143, 10-19, 2018 | 59 | 2018 |
| Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ... Microelectronics Reliability 54 (4), 682-697, 2014 | 49 | 2014 |
| Extended Analysis of the -FET: Operation as Capacitorless eDRAM C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ... IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017 | 45 | 2017 |
| Geometry, temperature, and body bias dependence of statistical variability in 20-nm bulk CMOS technology: A comprehensive simulation analysis X Wang, F Adamu-Lema, B Cheng, A Asenov IEEE transactions on electron devices 60 (5), 1547-1554, 2013 | 37 | 2013 |
| Integrated atomistic process and device simulation of decananometre MOSFETs A Asenov, M Jaraiz, S Roy, G Roy, F Adamu-Lema, AR Brown, V Moroz, ... International Conference on Simulation of Semiconductor Processes and …, 2002 | 36 | 2002 |
| -FET as Capacitor-Less eDRAM Cell For High-Density Integration C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ... IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017 | 35 | 2017 |
| Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs F Adamu-Lema, CM Compagnoni, SM Amoroso, N Castellani, L Gerrer, ... IEEE transactions on electron devices 60 (2), 833-839, 2012 | 34 | 2012 |
| Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform S Berrada, H Carrillo-Nunez, J Lee, C Medina-Bailon, T Dutta, O Badami, ... Journal of Computational Electronics 19, 1031-1046, 2020 | 33 | 2020 |
| Experimental and simulation study of silicon nanowire transistors using heavily doped channels VP Georgiev, MM Mirza, AI Dochioiu, F Adamu-Lema, SM Amoroso, ... IEEE Transactions on Nanotechnology 16 (5), 727-735, 2017 | 26 | 2017 |
| Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study K Samsudin, F Adamu-Lema, AR Brown, S Roy, A Asenov Solid-State Electronics 51 (4), 611-616, 2007 | 26 | 2007 |
| Intrinsic parameter fluctuations in nanometre scale thin-body SOI devices introduced by interface roughness AR Brown, F Adamu-Lema, A Asenov Superlattices and Microstructures 34 (3-6), 283-291, 2003 | 24 | 2003 |
| Simulation study of vertically stacked lateral Si nanowires transistors for 5-nm CMOS applications T Al-Ameri, VP Georgiev, F Adamu-Lema, A Asenov IEEE Journal of the Electron Devices Society 5 (6), 466-472, 2017 | 23 | 2017 |
| Problems with the continuous doping TCAD simulations of decananometer CMOS transistors A Asenov, F Adamu-Lema, X Wang, SM Amoroso IEEE Transactions on Electron Devices 61 (8), 2745-2751, 2014 | 23 | 2014 |
| 3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET L Gerrer, SM Amoroso, S Markov, F Adamu-Lema, A Asenov IEEE transactions on electron devices 60 (12), 4008-4013, 2013 | 22 | 2013 |
| RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study SM Amoroso, L Gerrer, S Markov, F Adamu-Lema, A Asenov Solid-State Electronics 84, 120-126, 2013 | 22 | 2013 |
| Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013 | 22 | 2013 |
| NESS: new flexible nano-electronic simulation software S Berrada, T Dutta, H Carrillo-Nunez, M Duan, F Adamu-Lema, J Lee, ... 2018 International Conference on Simulation of Semiconductor Processes and …, 2018 | 20 | 2018 |
| Performance and variability of doped multithreshold FinFETs for 10-nm CMOS F Adamu-Lema, X Wang, SM Amoroso, C Riddet, B Cheng, L Shifren, ... IEEE Transactions on Electron Devices 61 (10), 3372-3378, 2014 | 19 | 2014 |
a asenovThe University of GlasgowVerified email at glasgow.ac.uk
