| Enhanced spontaneous emission from quantum dots in short photonic crystal waveguides T Ba Hoang, J Beetz, L Midolo, M Skacel, M Lermer, M Kamp, S Höfling, ... Applied Physics Letters 100 (6), 2012 | 90 | 2012 |
| Controlling the charge environment of single quantum dots in a photonic-crystal cavity N Chauvin, C Zinoni, M Francardi, A Gerardino, L Balet, B Alloing, LH Li, ... Physical Review B 80 (24), 241306, 2009 | 76 | 2009 |
| Single-photon detection system for quantum optics applications A Korneev, Y Vachtomin, O Minaeva, A Divochiy, K Smirnov, O Okunev, ... Selected Topics in Quantum Electronics, IEEE Journal of 13 (4), 944-951, 2007 | 66 | 2007 |
| Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si (100) 300 mm wafers for next generation non planar devices R Cipro, T Baron, M Martin, J Moeyaert, S David, V Gorbenko, F Bassani, ... Applied Physics Letters 104 (26), 2014 | 62 | 2014 |
| Enhanced spontaneous emission rate from single InAs quantum dots in a photonic crystal nanocavity at telecom wavelengths L Balet, M Francardi, A Gerardino, N Chauvin, B Alloing, C Zinoni, ... Applied Physics Letters 91 (12), 2007 | 55 | 2007 |
| Enhanced spontaneous emission in a photonic-crystal light-emitting diode M Francardi, L Balet, A Gerardino, N Chauvin, D Bitauld, LH Li, B Alloing, ... Applied Physics Letters 93 (14), 143102-143102-3, 2008 | 53 | 2008 |
| In-situ passivation of GaAsP nanowires C Himwas, S Collin, P Rale, N Chauvin, G Patriarche, F Oehler, F Julien, ... Nanotechnology 28, 495707, 2017 | 38 | 2017 |
| Growth-interruption-induced low-density InAs quantum dots on GaAs LH Li, N Chauvin, G Patriarche, B Alloing, A Fiore Journal of Applied Physics 104 (8), 2008 | 37 | 2008 |
| Shape-engineered epitaxial InGaAs quantum rods for laser applications LH Li, P Ridha, G Patriarche, N Chauvin, A Fiore Applied Physics Letters 92 (12), 2008 | 37 | 2008 |
| Excitonic properties of wurtzite InP nanowires grown on silicon substrate MHH Alouane, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ... Nanotechnology 24 (3), 035704, 2013 | 36 | 2013 |
| InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon A Jaffal, W Redjem, P Regreny, HS Nguyen, S Cueff, X Letartre, ... Nanoscale 11, 21847-21855, 2019 | 33 | 2019 |
| Size and shape effects on excitons and biexcitons in single InAs∕ InP quantum dots N Chauvin, B Salem, G Bremond, G Guillot, C Bru-Chevallier, M Gendry Journal of applied physics 100 (7), 2006 | 32 | 2006 |
| Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate MHH Alouane, R Anufriev, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ... Nanotechnology 22 (40), 405702, 2011 | 30 | 2011 |
| Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates N Chauvin, MH Hadj Alouane, R Anufriev, H Khmissi, K Naji, G Patriarche, ... Applied Physics Letters 100 (1), 2012 | 27 | 2012 |
| Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP (001) E Dupuy, P Regreny, Y Robach, M Gendry, N Chauvin, E Tranvouez, ... Applied Physics Letters 89 (12), 123112-123112-3, 2006 | 26 | 2006 |
| Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon M Vettori, V Piazza, A Cattoni, A Scaccabarozzi, G Patriarche, P Regreny, ... Nanotechnology 30 (8), 084005, 2018 | 25 | 2018 |
| InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates H Khmissi, K Naji, MHH Alouane, N Chauvin, C Bru-Chevallier, B Ilahi, ... Journal of Crystal Growth 344 (1), 45-50, 2012 | 25 | 2012 |
| Controlling the aspect ratio of quantum dots: from columnar dots to quantum rods L Li, G Patriarche, N Chauvin, P Ridha, M Rossetti, J Andrzejewski, G Sek, ... IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1204-1213, 2008 | 24 | 2008 |
| Microphotoluminescence of exciton and biexciton around 1.5 μm from a single InAs∕ InP (001) quantum dot G Saint-Girons, N Chauvin, A Michon, G Patriarche, G Beaudoin, ... Applied physics letters 88 (13), 2006 | 24 | 2006 |
| Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires N Chauvin, A Mavel, G Patriarche, B Masenelli, M Gendry, D Machon Nano Letters 16 (5), 2926-2930, 2016 | 22 | 2016 |
