| Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP (001) J Brault, M Gendry, G Grenet, G Hollinger, J Olivares, B Salem, ... Journal of applied physics 92 (1), 506-510, 2002 | 116 | 2002 |
| From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) M Gendry, C Monat, J Brault, P Regreny, G Hollinger, B Salem, G Guillot, ... Journal of applied physics 95 (9), 4761-4766, 2004 | 111 | 2004 |
| Effect of HCl on the doping and shape control of silicon nanowires P Gentile, A Solanki, N Pauc, F Oehler, B Salem, G Rosaz, T Baron, ... Nanotechnology 23 (21), 215702, 2012 | 90 | 2012 |
| Silicon nanowires: Diameter dependence of growth rate and delay in growth F Dhalluin, T Baron, P Ferret, B Salem, P Gentile, JC Harmand Applied Physics Letters 96 (13), 2010 | 78 | 2010 |
| Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method O Demichel, V Calvo, A Besson, P Noe, B Salem, N Pauc, F Oehler, ... Nano letters 10 (7), 2323-2329, 2010 | 67 | 2010 |
| Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates B Salem, D Morris, V Aimez, J Beerens, J Beauvais, D Houde Journal of Physics: Condensed Matter 17 (46), 7327, 2005 | 64 | 2005 |
| Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP (001) P Miska, J Even, C Platz, B Salem, T Benyattou, C Bru-Chevalier, ... Journal of applied physics 95 (3), 1074-1080, 2004 | 63 | 2004 |
| An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires X Xu, A Potié, R Songmuang, JW Lee, B Bercu, T Baron, B Salem, ... Nanotechnology 22 (10), 105704, 2011 | 58 | 2011 |
| High-performance silicon nanowire field-effect transistor with silicided contacts G Rosaz, B Salem, N Pauc, P Gentile, A Potié, A Solanki, T Baron Semiconductor science and technology 26 (8), 085020, 2011 | 57 | 2011 |
| Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements N Hamdaoui, R Ajjel, B Salem, M Gendry Materials science in semiconductor processing 26, 431-437, 2014 | 48 | 2014 |
| Composition-Dependent Interfacial Abruptness in Au-Catalyzed Si1–xGex/Si/Si1–xGex Nanowire Heterostructures P Periwal, NV Sibirev, G Patriarche, B Salem, F Bassani, VG Dubrovskii, ... Nano letters 14 (9), 5140-5147, 2014 | 48 | 2014 |
| Optical properties of self-assembled InAs quantum islands grown on InP (001) vicinal substrates B Salem, J Olivares, G Guillot, G Bremond, J Brault, C Monat, M Gendry, ... Applied Physics Letters 79 (26), 4435-4437, 2001 | 48 | 2001 |
| Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP (001) B Salem, T Benyattou, G Guillot, C Bru-Chevallier, G Bremond, C Monat, ... Physical Review B 66 (19), 193305, 2002 | 46 | 2002 |
| Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials B Salem, D Morris, V Aimez, J Beauvais, D Houde Semiconductor science and technology 21 (3), 283, 2006 | 42 | 2006 |
| Controlled growth of SiGe nanowires by addition of HCl in the gas phase A Potié, T Baron, L Latu-Romain, G Rosaz, B Salem, L Montes, P Gentile, ... Journal of Applied Physics 110 (2), 2011 | 39 | 2011 |
| Vertically integrated silicon-germanium nanowire field-effect transistor G Rosaz, B Salem, N Pauc, A Potié, P Gentile, T Baron Applied Physics Letters 99 (19), 2011 | 35 | 2011 |
| Functional devices from bottom-up Silicon nanowires: A review T Arjmand, M Legallais, TTT Nguyen, P Serre, M Vallejo-Perez, F Morisot, ... Nanomaterials 12 (7), 1043, 2022 | 34 | 2022 |
| Size and shape effects on excitons and biexcitons in single InAs∕ InP quantum dots N Chauvin, B Salem, G Bremond, G Guillot, C Bru-Chevallier, M Gendry Journal of applied physics 100 (7), 2006 | 32 | 2006 |
| Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices B Ilahi, L Sfaxi, F Hassen, L Bouzaiene, H Maaref, B Salem, G Bremond, ... physica status solidi (a) 199 (3), 457-463, 2003 | 32 | 2003 |
| Improvement of AlN film quality using plasma enhanced atomic layer deposition with substrate biasing M Legallais, H Mehdi, S David, F Bassani, S Labau, B Pelissier, T Baron, ... ACS applied materials & interfaces 12 (35), 39870-39880, 2020 | 31 | 2020 |
Pascal GentileceaVerified email at cea.fr
