Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide MH Weng, DT Clark, SN Wright, DL Gordon, MA Duncan, SJ Kirkham, ... Semiconductor Science and Technology 32 (5), 054003, 2017 | 27 | 2017 |
Low Cost Electro-deposition of Cuprous Oxide PN Homo-junction Solar Cell F Arith, SAM Anis, MM Said, MI Idris Advanced Materials Research 827, 38-43, 2014 | 23 | 2014 |
Face Recognition using Principle Component Analysis (PCA) and Linear Discriminant Analysis (LDA) MNS Zainudin, HR Radi, SM Abdullah, RA Rahim, MM Ismail | 22 | 2013 |
Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures MI Idris, MH Weng, HK Chan, AE Murphy, DT Clark, RAR Young, ... Journal of Applied Physics 120 (21), 2016 | 17 | 2016 |
ZnO quantum dot based thin films as promising electron transport layer: Influence of surface-to-volume ratio on the photoelectric properties AT Nomaan, AA Ahmed, NM Ahmed, MI Idris, MR Hashim, M Rashid Ceramics International 47 (9), 12397-12409, 2021 | 16 | 2021 |
A Low Voltage VGA for RFID Receivers MIB Idris, MBI Reaz, MAS Bhuiyan | 12 | 2013 |
Low power operational amplifier in 0.13 um technology MI Idris, N Yusop, SA Mohd Chachuli, MM Ismail, F Arith, AM Darsono Modern Applied Science 9 (1), 34-44, 2015 | 11 | 2015 |
Structural, optical and electrical investigation of low-temperature processed zinc oxide quantum dots based thin films using precipitation-spin coating on flexible substrates S Muhammad, AT Nomaan, MI Idris, M Rashid Physica B: Condensed Matter 635, 413806, 2022 | 9 | 2022 |
Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection MI Idris, MH Weng, A Peters, RJ Siddall, NJ Townsend, NG Wright, ... Journal of Physics D: Applied Physics 52 (50), 505102, 2019 | 9 | 2019 |
Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors MI Idris, NG Wright, AB Horsfall Materials Science Forum 924, 486-489, 2018 | 9 | 2018 |
Structural engineering of double shells decoration for preparing a high-efficiency electromagnetic wave absorber W Li, A Hassan, ASAH Zedan, M Idris, M Fayed, S Mehrez, K Nag Ceramics International 49 (9), 14538-14550, 2023 | 8 | 2023 |
Activity recognition on subject independent using machine learning YJ Kee, MNS Zainudin, MI Idris, RH Ramlee, MR Kamarudin Cybernetics and Information Technologies 20 (3), 64-74, 2020 | 7 | 2020 |
Design and analysis of low noise amplifier using cadence MI Idris, N Yusop, SA Mohd Chachuli, MM Ismail Journal of Theoretical and Applied Information Technology 69 (1), 151-160, 2014 | 7 | 2014 |
Concentration dependence of physical properties of low temperature processed ZnO quantum dots thin films on polyethylene terephthalate as potential electron transport material … S Muhammad, AT Nomaan, AO Olaoye, MI Idris, M Rashid Ceramics International 48 (21), 31559-31569, 2022 | 6 | 2022 |
LOW POWER IN NANO-SCALE CMOS MEMORY. LF Rahman, FB Arith, MIB Idris, MBI Reaz, M Marufuzzaman Journal of Theoretical & Applied Information Technology 61 (2), 2014 | 4 | 2014 |
ROS 2 Configuration for Delta Robot Arm Kinematic Motion and Stereo Camera Visualization KM Saipullah, WHM Saad, SH Chong, MI Idris, SA Radzi Journal of Robotics and Control (JRC) 3 (3), 320-327, 2022 | 3 | 2022 |
An Investigation on NiO for Hole Transport Material in Perovskite Solar Cells S Muniandy, MIB Idris, ZAFBM Napiah, HHM Yusof, SAM Chachuli, ... 2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 112-115, 2021 | 3 | 2021 |
3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric MI Idris, AB Horsfall Materials Science in Semiconductor Processing 128, 105727, 2021 | 3 | 2021 |
Surface Treatment of 4H-SiC MOSFETs Prior to Al2O3 Deposition MI Idris, AB Horsfall Materials Science Forum 1004, 541-546, 2020 | 3 | 2020 |
Electrical stability impact of gate oxide in channel implanted SiC NMOS and PMOS transistors MI Idris, MH Weng, HK Chan, AE Murphy, DA Smith, RAR Young, ... Materials Science Forum 897, 513-516, 2017 | 3 | 2017 |