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Mohamed Arafa
Mohamed Arafa
Sr. Principal Engineer at Intel. Adjunct Professor at ASU
Dirección de correo verificada de intel.com - Página principal
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Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
K Ismail, M Arafa, KL Saenger, JO Chu, BS Meyerson
Applied Physics Letters 66 (9), 1077-1079, 1995
2981995
Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
K Ismail, FK LeGoues, KL Saenger, M Arafa, JO Chu, PM Mooney, ...
Physical review letters 73 (25), 3447, 1994
1771994
Cascade lake: Next generation intel xeon scalable processor
M Arafa, B Fahim, S Kottapalli, A Kumar, LP Looi, S Mandava, A Rudoff, ...
IEEE Micro 39 (2), 29-36, 2019
792019
Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP
A Mahajan, M Arafa, P Fay, C Caneau, I Adesida
IEEE Transactions on Electron Devices 45 (12), 2422-2429, 1998
791998
High speed p-type SiGe modulation-doped field-effect transistors
M Arafa, P Fay, K Ismail, JO Chu, BS Meyerson, I Adesida
IEEE Electron Device Letters 17 (3), 124-126, 1996
731996
Method and apparatus to provide an area efficient antenna diversity receiver
M Arafa
US Patent 7,116,952, 2006
672006
A 70-GHz fT low operating bias self-aligned p-type SiGe MODFET
M Arafa, K Ismail, JO Chu, BS Meyerson, I Adesida
IEEE Electron Device Letters 17 (12), 586-588, 1996
591996
Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures
K Ismail, M Arafa, F Stern, JO Chu, BS Meyerson
Applied physics letters 66 (7), 842-844, 1995
531995
Contact layout for MOSFETs under tensile strain
G Schrom, M Armstrong, M Arafa
US Patent App. 10/329,078, 2004
482004
InGaAs metal‐semiconductor‐metal photodetectors with engineered Schottky barrier heights
WA Wohlmuth, M Arafa, A Mahajan, P Fay, I Adesida
Applied physics letters 69 (23), 3578-3580, 1996
421996
0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor
A Mahajan, M Arafa, P Fay, C Caneau, I Adesida
IEEE Electron Device Letters 18 (6), 284-286, 1997
411997
Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement-and depletion-mode high-electron mobility transistors
A Mahajan, G Cueva, M Arafa, P Fay, I Adesida
IEEE Electron Device Letters 18 (8), 391-393, 1997
351997
DC and RF performance of 0.25 μm p-type SiGe MODFET
M Arafa, P Fay, K Ismail, JO Chu, BS Meyerson, I Adesida
IEEE Electron Device Letters 17 (9), 449-451, 1996
311996
Sidewall spacers and methods of making same
M Arafa, W Han, A Myers, D Simon
US Patent App. 09/752,798, 2002
282002
Integration of InAlAs/InGaAs/InP enhancement-and depletion-mode high electron mobility transistors for high-speed circuit applications
A Mahajan, P Fay, M Arafa, I Adesida
IEEE Transactions on Electron Devices 45 (1), 338-340, 1998
251998
Low dark current photodetector
I Adesida, W Wohlmuth, M Arafa, P Fay
US Patent 5,880,482, 1999
231999
Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers
P Fay, M Arafa, WA Wohlmuth, C Caneau, S Chandrasekhar, I Adesida
Journal of lightwave technology 15 (10), 1871-1879, 1997
201997
High-transconductance p-type SiGe modulation-doped field-effect transistor
M Arafa, K Ismail, P Fay, JO Chu, BS Meyerson, I Adesida
Electronics Letters 31 (8), 680-681, 1995
181995
Integrated circuit with borderless contacts
M Arafa, S Thompson
US Patent 6,228,777, 2001
172001
Integrated enhancement-and depletion-mode FET's in modulation-doped Si/SiGe heterostructures
K Ismail, JO Chu, M Arafa
IEEE Electron Device Letters 18 (9), 435-437, 1997
171997
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