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| Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry E Iliopoulos, A Adikimenakis, C Giesen, M Heuken, A Georgakilas Applied Physics Letters 92 (19), 2008 | 134 | 2008 |
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| Realistic end-to-end simulation of the optoelectronic links and comparison with the electrical interconnections for system-on-chip applications ED Kyriakis-Bitzaros, N Haralabidis, M Lagadas, A Georgakilas, ... Journal of lightwave technology 19 (10), 1532, 2001 | 83 | 2001 |
| Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, A Adikimenakis, A Georgakilas Applied physics letters 88 (19), 2006 | 75 | 2006 |
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| Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy A Georgakilas, J Stoemenos, K Tsagaraki, P Komninou, N Flevaris, ... Journal of materials research 8 (8), 1908-1921, 1993 | 68 | 1993 |
| Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of (0001) substrates S Mikroulis, A Georgakilas, A Kostopoulos, V Cimalla, E Dimakis, ... Applied Physics Letters 80 (16), 2886-2888, 2002 | 67 | 2002 |
| Micro-Raman characterization of heterostructures AG Kontos, YS Raptis, NT Pelekanos, A Georgakilas, E Bellet-Amalric, ... Physical Review B—Condensed Matter and Materials Physics 72 (15), 155336, 2005 | 66 | 2005 |
| Bowing of the band gap pressure coefficient in InxGa1− xN alloys G Franssen, I Gorczyca, T Suski, A Kamińska, J Pereiro, E Munoz, ... Journal of Applied Physics 103 (3), 2008 | 64 | 2008 |
| Temperature dependence of GaN Schottky diodes I–V characteristics J Osvald, J Kuzmik, G Konstantinidis, P Lobotka, A Georgakilas Microelectronic Engineering 81 (2-4), 181-187, 2005 | 64 | 2005 |
| Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy SL Sahonta, GP Dimitrakopulos, T Kehagias, J Kioseoglou, ... Applied Physics Letters 95 (2), 2009 | 63 | 2009 |
| Gallium nitride-based potentiometric anion sensor NA Chaniotakis, Y Alifragis, G Konstantinidis, A Georgakilas Analytical chemistry 76 (18), 5552-5556, 2004 | 62 | 2004 |
| Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, A Georgakilas Applied Physics Letters 86 (13), 2005 | 59 | 2005 |
