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| AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources A El Fatimy, N Dyakonova, Y Meziani, T Otsuji, W Knap, S Vandenbrouk, ... Journal of Applied Physics 107 (2), 2010 | 202 | 2010 |
| Current instabilities in GaN-based devices I Daumiller, D Theron, C Gaquiere, A Vescan, R Dietrich, A Wieszt, ... IEEE Electron Device Letters 22 (2), 62-64, 2001 | 202 | 2001 |
| Room-temperature terahertz emission from nanometer field-effect transistors N Dyakonova, A El Fatimy, J Łusakowski, W Knap, MI Dyakonov, ... Applied physics letters 88 (14), 2006 | 195 | 2006 |
| Testing the temperature limits of GaN-based HEMT devices D Maier, M Alomari, N Grandjean, JF Carlin, MA Diforte-Poisson, C Dua, ... IEEE Transactions on device and materials reliability 10 (4), 427-436, 2010 | 184 | 2010 |
| Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate D Ducatteau, A Minko, V Hoel, E Morvan, E Delos, B Grimbert, ... IEEE Electron Device Letters 27 (1), 7-9, 2005 | 149 | 2005 |
| AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz N Sarazin, E Morvan, MA di Forte Poisson, M Oualli, C Gaquiere, O Jardel, ... IEEE Electron Device Letters 31 (1), 11-13, 2009 | 144 | 2009 |
| Terahertz detection by GaN/AlGaN transistors A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ... Electronics Letters 42 (23), 1342-1344, 2006 | 142 | 2006 |
| InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage M Zaknoune, B Bonte, C Gaquiere, Y Cordier, Y Druelle, D Theron, ... IEEE Electron Device Letters 19 (9), 345-347, 1998 | 117 | 1998 |
| Status of the emerging InAlN/GaN power HEMT technology F Medjdoub, JF Carlin, C Gaquière, N Grandjean, E Kohn The Open Electrical & Electronic Engineering Journal 2 (1), 2008 | 116 | 2008 |
| Trap effects studies in GaN MESFETs by pulsed measurements S Trassaert, B Boudart, C Gaquière, D Theron, Y Crosnier, F Huet, ... Electronics Letters 35 (16), 1386-1388, 1999 | 98 | 1999 |
| A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX P Chevalier, F Pourchon, T Lacave, G Avenier, Y Campidelli, L Depoyan, ... 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2009 | 90 | 2009 |
| AlGaN/GaN HEMT on (111) single crystalline diamond M Alomari, A Dussaigne, D Martin, N Grandjean, C Gaquiere, E Kohn Electronics letters 46 (4), 1, 2010 | 89 | 2010 |
| Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods J Kuzmik, S Bychikhin, D Pogany, C Gaquière, E Pichonat, E Morvan Journal of Applied Physics 101 (5), 2007 | 88 | 2007 |
| Diamond overgrown InAlN/GaN HEMT M Alomari, M Dipalo, S Rossi, MA Diforte-Poisson, S Delage, JF Carlin, ... Diamond and Related Materials 20 (4), 604-608, 2011 | 86 | 2011 |
| InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess M Alomari, F Medjdoub, JF Carlin, E Feltin, N Grandjean, A Chuvilin, ... IEEE electron device letters 30 (11), 1131-1133, 2009 | 86 | 2009 |
| Electrical characterization of (Ni/Au)/Al0. 25Ga0. 75N/GaN/SiC Schottky barrier diode S Saadaoui, M Mongi Ben Salem, M Gassoumi, H Maaref, C Gaquière Journal of Applied Physics 110 (1), 2011 | 85 | 2011 |
| Characteristics of Al2O3/AlInN/GaN MOSHEMT F Medjdoub, N Sarazin, M Tordjman, M Magis, MA di Forte-Poisson, ... Electronics letters 43 (12), 691-692, 2007 | 83 | 2007 |
| Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation C Ostermaier, G Pozzovivo, JFÇ Carlin, B Basnar, W Schrenk, Y Douvry, ... IEEE Electron Device Letters 30 (10), 1030-1032, 2009 | 81 | 2009 |
| Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ... Journal of Applied Physics 113 (3), 2013 | 79 | 2013 |
