| Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition BS Meyerson Applied Physics Letters 48 (12), 797-799, 1986 | 732 | 1986 |
| Heterojunction bipolar transistors using Si-Ge alloys SS Iyer, GL Patton, JMC Stork, BS Meyerson, DL Harame IEEE Transactions on Electron Devices 36 (10), 2043-2064, 1989 | 572 | 1989 |
| Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits DL Harame, JH Comfort, JD Cressler, EF Crabbe, JYC Sun, BS Meyerson, ... IEEE Transactions on Electron Devices 42 (3), 455-468, 1995 | 569 | 1995 |
| 75-GHz f/sub T/SiGe-base heterojunction bipolar transistors GL Patton, JH Comfort, BS Meyerson, EF Crabbe, GJ Scilla, E De Fresart, ... IEEE Electron Device Letters 11 (4), 171-173, 1990 | 518 | 1990 |
| Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy BS Meyerson, KJ Uram, FK LeGoues Applied Physics Letters 53 (25), 2555-2557, 1988 | 492 | 1988 |
| Anomalous strain relaxation in SiGe thin films and superlattices FK LeGoues, BS Meyerson, JF Morar Physical review letters 66 (22), 2903, 1991 | 475 | 1991 |
| Oxidation studies of SiGe FK LeGoues, R Rosenberg, T Nguyen, F Himpsel, BS Meyerson Journal of Applied Physics 65 (4), 1724-1728, 1989 | 440 | 1989 |
| Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices FK LeGoues, BS Meyerson, JF Morar, PD Kirchner Journal of applied physics 71 (9), 4230-4243, 1992 | 381 | 1992 |
| SiGe-channel heterojunction p-MOSFET's S Verdonckt-Vandebroek, EF Crabbe, BS Meyerson, DL Harame, ... IEEE Transactions on Electron Devices 41 (1), 90-101, 1994 | 375 | 1994 |
| Mechanistic studies of chemical vapor deposition JM Jasinski, BS Meyerson, BA Scott Annual Review of Physical Chemistry 38 (1), 109-140, 1987 | 311 | 1987 |
| Si/SiGe epitaxial-base transistors. II. Process integration and analog applications DL Harame, JH Comfort, JD Cressler, EF Crabbe, JYC Sun, BS Meyerson, ... IEEE Transactions on Electron Devices 42 (3), 469-482, 1995 | 300 | 1995 |
| Bistable conditions for low‐temperature silicon epitaxy BS Meyerson, FJ Himpsel, KJ Uram Applied Physics Letters 57 (10), 1034-1036, 1990 | 300 | 1990 |
| Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures K Ismail, M Arafa, KL Saenger, JO Chu, BS Meyerson Applied Physics Letters 66 (9), 1077-1079, 1995 | 299 | 1995 |
| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018 | 297 | 2018 |
| SiGe thin film or SOI MOSFET and method for making the same JN Burghartz, BS Meyerson, YC Sun US Patent 5,461,250, 1995 | 291 | 1995 |
| UHV/CVD growth of Si and Si: Ge alloys: chemistry, physics, and device applications BS Meyerson Proceedings of the IEEE 80 (10), 1592-1608, 1992 | 291 | 1992 |
| Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation FK LeGoues, R Rosenberg, BS Meyerson Applied physics letters 54 (7), 644-646, 1989 | 257 | 1989 |
| Electron transport properties of Si/SiGe heterostructures: Measurements and device implications K Ismail, SF Nelson, JO Chu, BS Meyerson Applied physics letters 63 (5), 660-662, 1993 | 254 | 1993 |
| Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films BS Meyerson, FK LeGoues, TN Nguyen, DL Harame Applied physics letters 50 (2), 113-115, 1987 | 221 | 1987 |
| IEEE Electron Device Lett GL Patton, JH Comfort, BS Meyerson, EF Crabbe, GJ Scilla, E De Fresart, ... EDL-11 171 (1109), 55.61782, 1990 | 213 | 1990 |
