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Anant Agarwal
Anant Agarwal
Professor of Electrical Engineering, Ohio State University
Verified email at ieee.org
Title
Cited by
Cited by
Year
Status and prospects for SiC power MOSFETs
JA Cooper, MR Melloch, R Singh, A Agarwal, JW Palmour
IEEE Transactions on Electron Devices 49 (4), 658-664, 2002
5642002
Advances in silicon carbide processing and applications
SE Saddow, AK Agarwal
Artech House, 2004
4872004
SiC power-switching devices-the second electronics revolution?
JA Cooper, A Agarwal
Proceedings of the IEEE 90 (6), 956-968, 2002
4332002
Characterization, modeling, and application of 10-kV SiC MOSFET
J Wang, T Zhao, J Li, AQ Huang, R Callanan, F Husna, A Agarwal
IEEE Transactions on Electron Devices 55 (8), 1798-1806, 2008
4162008
A new degradation mechanism in high-voltage SiC power MOSFETs
A Agarwal, H Fatima, S Haney, SH Ryu
IEEE Electron Device Letters 28 (7), 587-589, 2007
3002007
Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy
G Martin, S Strite, A Botchkarev, A Agarwal, A Rockett, H Morkoc, ...
Applied physics letters 65 (5), 610-612, 1994
2861994
Temperature dependence of Fowler-Nordheim current in 6H-and 4H-SiC MOS capacitors
AK Agarwal, S Seshadri, LB Rowland
IEEE Electron Device Letters 18 (12), 592-594, 1997
2761997
GaN grown on hydrogen plasma cleaned 6H‐SiC substrates
ME Lin, S Strite, A Agarwal, A Salvador, GL Zhou, N Teraguchi, A Rockett, ...
Applied physics letters 62 (7), 702-704, 1993
2441993
1800 V NPN bipolar junction transistors in 4H-SiC
SH Ryu, AK Agarwal, R Singh, JW Palmour
IEEE Electron Device Letters 22 (3), 124-126, 2001
2332001
Interface trap profile near the band edges at the interface
NS Saks, SS Mani, AK Agarwal
Applied Physics Letters 76 (16), 2250-2252, 2000
2092000
10-kV, 123-m/spl Omega//spl middot/cm24H-SiC power DMOSFETs
SH Ryu, S Krishnaswami, M O'Loughlin, J Richmond, A Agarwal, ...
IEEE Electron Device Letters 25 (8), 556-558, 2004
2032004
SiC power devices for microgrids
Q Zhang, R Callanan, MK Das, SH Ryu, AK Agarwal, JW Palmour
IEEE Transactions on Power Electronics 25 (12), 2889-2896, 2010
2022010
Comparisons of SiC MOSFET and Si IGBT based motor drive systems
T Zhao, J Wang, AQ Huang, A Agarwal
2007 IEEE Industry Applications Annual Meeting, 331-335, 2007
1982007
1.1 kv 4h-sic power umosfets
AK Agarwal, JB Casady, LB Rowland, WF Valek, MH White, CD Brandt
IEEE Electron Device Letters 18 (12), 586-588, 1997
1791997
Thermal desorption of ultraviolet–ozone oxidized Ge (001) for substrate cleaning
XJ Zhang, G Xue, A Agarwal, R Tsu, MA Hasan, JE Greene, A Rockett
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (5 …, 1993
1751993
Hall mobility and free electron density at the interface in 4H–SiC
NS Saks, AK Agarwal
Applied Physics Letters 77 (20), 3281-3283, 2000
1742000
10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation
D Grider, M Das, A Agarwal, J Palmour, S Leslie, J Ostop, R Raju, ...
2011 IEEE Electric Ship Technologies Symposium, 131-134, 2011
1572011
Non-volatile random access memory cell constructed of silicon carbide
AK Agarwal, RR Siergiej, CD Brandt, MH White
US Patent 5,510,630, 1996
1521996
X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3d states in GaN
WRL Lambrecht, B Segall, S Strite, G Martin, A Agarwal, H Morkoc, ...
Physical Review B 50 (19), 14155, 1994
1481994
Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors
S Dhar, S Haney, L Cheng, SR Ryu, AK Agarwal, LC Yu, KP Cheung
Journal of Applied Physics 108 (5), 2010
1362010
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