| CMOS scaling into the nanometer regime Y Taur, DA Buchanan, W Chen, DJ Frank, KE Ismail, SH Lo, ... Proceedings of the IEEE 85 (4), 486-504, 1997 | 1287 | 1997 |
| Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures K Ismail, M Arafa, KL Saenger, JO Chu, BS Meyerson Applied Physics Letters 66 (9), 1077-1079, 1995 | 299 | 1995 |
| High speed composite p-channel Si/SiGe heterostructure for field effect devices JO Chu, R Hammond, KEE Ismail, SJ Koester, PM Mooney, JA Ott US Patent 6,350,993, 2002 | 272 | 2002 |
| Strained Si/SiGe layers on insulator JO Chu, KEE Ismail US Patent 6,059,895, 2000 | 260 | 2000 |
| Electron transport properties of Si/SiGe heterostructures: Measurements and device implications K Ismail, SF Nelson, JO Chu, BS Meyerson Applied physics letters 63 (5), 660-662, 1993 | 254 | 1993 |
| High hole mobility in SiGe alloys for device applications K Ismail, JO Chu, BS Meyerson Applied Physics Letters 64 (23), 3124-3126, 1994 | 210 | 1994 |
| Strained Si/SiGe layers on insulator JO Chu, KEE Ismail US Patent 5,906,951, 1999 | 209 | 1999 |
| High electron mobility in modulation‐doped Si/SiGe K Ismail, BS Meyerson, PJ Wang Applied physics letters 58 (19), 2117-2119, 1991 | 206 | 1991 |
| Electron resonant tunneling in Si/SiGe double barrier diodes K Ismail, BS Meyerson, PJ Wang Applied physics letters 59 (8), 973-975, 1991 | 200 | 1991 |
| Bulk and strained silicon on insulator using local selective oxidation JO Chu, KEE Ismail, KY Lee, JA Ott US Patent 5,963,817, 1999 | 186 | 1999 |
| Bulk and strained silicon on insulator using local selective oxidation JO Chu, KEE Ismail, KY Lee, JA Ott US Patent 6,251,751, 2001 | 179 | 2001 |
| Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures K Ismail, FK LeGoues, KL Saenger, M Arafa, JO Chu, PM Mooney, ... Physical review letters 73 (25), 3447, 1994 | 177 | 1994 |
| Room‐temperature electron mobility in strained Si/SiGe heterostructures SF Nelson, K Ismail, JO Chu, BS Meyerson Applied physics letters 63 (3), 367-369, 1993 | 164 | 1993 |
| Si/SiGe vertical junction field effect transistor KEE Ismail, BS Meyerson US Patent 5,714,777, 1998 | 147 | 1998 |
| Scalable MOS field effect transistor KK Chan, JO Chu, KEE Ismail, SA Rishton, KL Saenger US Patent 6,096,590, 2000 | 146 | 2000 |
| High-transconductance n-type Si/SiGe modulation-doped field-effect transistors K Ismail, BS Meyerson, S Rishton, J Chu, S Nelson, J Nocera IEEE electron device letters 13 (5), 229-231, 1992 | 145 | 1992 |
| Abrupt “delta-like” doping in Si and SiGe films by UHV-CVD F Cardone, JO Chu, KE Ismail US Patent 7,906,413, 2011 | 136 | 2011 |
| Negative transconductance and negative differential resistance in a grid‐gate modulation‐doped field‐effect transistor K Ismail, W Chu, A Yen, DA Antoniadis, HI Smith Applied physics letters 54 (5), 460-462, 1989 | 129 | 1989 |
| Advance integrated chemical vapor deposition (AICVD) for semiconductor devices JO Chu, KEE Ismail US Patent 6,013,134, 2000 | 110 | 2000 |
| Conductance in very clean quantum wires and rings K Ismail, S Washburn, KY Lee Applied physics letters 59 (16), 1998-2000, 1991 | 107 | 1991 |
