Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth AM Munshi, DL Dheeraj, VT Fauske, DC Kim, ATJ van Helvoort, ... Nano letters 12 (9), 4570-4576, 2012 | 243 | 2012 |
Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography AM Munshi, DL Dheeraj, VT Fauske, DC Kim, J Huh, JF Reinertsen, ... Nano letters 14 (2), 960-966, 2014 | 176 | 2014 |
Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires TB Hoang, AF Moses, HL Zhou, DL Dheeraj, BO Fimland, H Weman Applied physics letters 94 (13), 2009 | 162 | 2009 |
Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts DL Dheeraj, G Patriarche, H Zhou, TB Hoang, AF Moses, S Grønsberg, ... Nano letters 8 (12), 4459-4463, 2008 | 150 | 2008 |
Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress G Signorello, E Lörtscher, PA Khomyakov, S Karg, DL Dheeraj, ... Nature communications 5 (1), 3655, 2014 | 146 | 2014 |
A story told by a single nanowire: optical properties of wurtzite GaAs L Ahtapodov, J Todorovic, P Olk, T Mjåland, P Slåttnes, DL Dheeraj, ... Nano letters 12 (12), 6090-6095, 2012 | 130 | 2012 |
Role of nonlinear effects in nanowire growth and crystal phase VG Dubrovskii, NV Sibirev, GE Cirlin, AD Bouravleuv, YB Samsonenko, ... Physical Review B—Condensed Matter and Materials Physics 80 (20), 205305, 2009 | 127 | 2009 |
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si (111) L Largeau, DL Dheeraj, M Tchernycheva, GE Cirlin, JC Harmand Nanotechnology 19 (15), 155704, 2008 | 111 | 2008 |
Rectifying single GaAsSb nanowire devices based on self-induced compositional gradients J Huh, H Yun, DC Kim, AM Munshi, DL Dheeraj, H Kauko, ... Nano Letters 15 (6), 3709-3715, 2015 | 76 | 2015 |
Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si (111) AM Munshi, DL Dheeraj, J Todorovic, ATJ van Helvoort, H Weman, ... Journal of Crystal Growth 372, 163-169, 2013 | 73 | 2013 |
Zinc blende GaAsSb nanowires grown by molecular beam epitaxy DL Dheeraj, G Patriarche, L Largeau, HL Zhou, ATJ Van Helvoort, F Glas, ... Nanotechnology 19 (27), 275605, 2008 | 73 | 2008 |
Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control T Ba Hoang, AF Moses, L Ahtapodov, H Zhou, DL Dheeraj, ... Nano letters 10 (8), 2927-2933, 2010 | 72 | 2010 |
New insights into the origins of Sb-induced effects on self-catalyzed GaAsSb nanowire arrays D Ren, DL Dheeraj, C Jin, JS Nilsen, J Huh, JF Reinertsen, AM Munshi, ... Nano letters 16 (2), 1201-1209, 2016 | 70 | 2016 |
Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy DL Dheeraj, AM Munshi, M Scheffler, ATJ Van Helvoort, H Weman, ... Nanotechnology 24 (1), 015601, 2012 | 62 | 2012 |
Wurtzite GaAs/AlGaAs core–shell nanowires grown by molecular beam epitaxy HL Zhou, TB Hoang, DL Dheeraj, ATJ Van Helvoort, L Liu, JC Harmand, ... Nanotechnology 20 (41), 415701, 2009 | 60 | 2009 |
Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy C Sartel, DL Dheeraj, F Jabeen, JC Harmand Journal of crystal growth 312 (14), 2073-2077, 2010 | 41 | 2010 |
Polarization dependent photocurrent spectroscopy of single wurtzite GaAs/AlGaAs core-shell nanowires DC Kim, DL Dheeraj, BO Fimland, H Weman Applied Physics Letters 102 (14), 2013 | 38 | 2013 |
Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires DL Dheeraj, G Patriarche, H Zhou, JC Harmand, H Weman, BO Fimland Journal of crystal growth 311 (7), 1847-1850, 2009 | 36 | 2009 |
In situ heat-induced replacement of GaAs nanowires by Au VT Fauske, J Huh, G Divitini, DL Dheeraj, AM Munshi, C Ducati, H Weman, ... Nano letters 16 (5), 3051-3057, 2016 | 32 | 2016 |
Self-catalyzed MBE grown GaAs/GaAsxSb1− x core–shell nanowires in ZB and WZ crystal structures SG Ghalamestani, AM Munshi, DL Dheeraj, BO Fimland, H Weman, ... Nanotechnology 24 (40), 405601, 2013 | 31 | 2013 |