|Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor|
E Lee, D Kang, JC Lee, CJ Kim, H Lim
US Patent 8,618,543, 2013
|High-Performance oxide thin film transistors passivated by various gas plasmas|
S Kim, J Park, C Kim, S Kim, I Song, H Yin, J Lee, E Lee, Y Park
The Electrochemical Society, 214th ECS Meeting, 1, 2008
|Two series oxide resistors applicable to high speed and high density nonvolatile memory|
MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ...
Advanced Materials 19 (22), 3919-3923, 2007
|Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays|
S Jeon, SE Ahn, I Song, CJ Kim, UI Chung, E Lee, I Yoo, A Nathan, S Lee, ...
Nature materials 11 (4), 301-305, 2012
|A flexible bimodal sensor array for simultaneous sensing of pressure and temperature|
NT Tien, S Jeon, DI Kim, TQ Trung, M Jang, BU Hwang, KE Byun, J Bae, ...
Advanced Materials 26 (5), 796-804, 2014
|Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors|
CJ Kim, S Kim, JH Lee, JS Park, S Kim, J Park, E Lee, J Lee, Y Park, ...
Applied Physics Letters 95 (25), 2009
|Quantification of microstructural features in α/β titanium alloys|
J Tiley, T Searles, E Lee, S Kar, R Banerjee, JC Russ, HL Fraser
Materials Science and Engineering: A 372 (1-2), 191-198, 2004
|Oxide semiconductor, thin film transistor including the same and method of manufacturing a thin film transistor|
D Kang, I Song, Y Park, CJ Kim, E Lee, JC Lee
US Patent App. 12/078,706, 2009
|Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors|
HS Kim, SH Jeon, JS Park, TS Kim, KS Son, JB Seon, SJ Seo, SJ Kim, ...
Scientific reports 3 (1), 1459, 2013
|Oxide semiconductors and thin film transistors comprising the same|
CJ Kim, E Lee, Y Park, JC Park
US Patent 7,935,964, 2011
|High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation|
J Park, S Kim, C Kim, S Kim, I Song, H Yin, KK Kim, S Lee, K Hong, J Lee, ...
Applied Physics Letters 93 (5), 2008
|Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors|
J Park, I Song, S Kim, S Kim, C Kim, J Lee, H Lee, E Lee, H Yin, KK Kim, ...
Applied Physics Letters 93 (5), 2008
|Short channel characteristics of gallium–indium–zinc–oxide thin film transistors for three-dimensional stacking memory|
I Song, S Kim, H Yin, CJ Kim, J Park, S Kim, HS Choi, E Lee, Y Park
IEEE Electron Device Letters 29 (6), 549-552, 2008
|Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor|
CJ Kim, I Song, D Kang, Y Park, E Lee
US Patent 7,919,365, 2011
|Source/drain series-resistance effects in amorphous gallium–indium zinc-oxide thin film transistors|
J Park, C Kim, S Kim, I Song, S Kim, D Kang, H Lim, H Yin, R Jung, E Lee, ...
IEEE Electron Device Letters 29 (8), 879-881, 2008
|Microstructural visualization of compositional changes induced by transition metal dissolution in Ni-rich layered cathode materials by high-resolution particle analysis|
DS Ko, JH Park, S Park, YN Ham, SJ Ahn, JH Park, HN Han, E Lee, ...
Nano energy 56, 434-442, 2019
|180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications|
S Jeon, S Park, I Song, JH Hur, J Park, S Kim, S Kim, H Yin, E Lee, S Ahn, ...
2010 International Electron Devices Meeting, 21.3. 1-21.3. 4, 2010
|Direct observations and analyses of dislocation substructures in the α phase of an α/β Ti-alloy formed by nanoindentation|
GB Viswanathan, E Lee, DM Maher, S Banerjee, HL Fraser
Acta materialia 53 (19), 5101-5115, 2005
|Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application|
E Lee, A Benayad, T Shin, HI Lee, DS Ko, TS Kim, KS Son, M Ryu, S Jeon, ...
Scientific reports 4 (1), 4948, 2014
|Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities|
B Hwang, Y An, H Lee, E Lee, S Becker, YH Kim, H Kim
Scientific reports 7 (1), 41336, 2017