Eunha Lee
Eunha Lee
SAIT (Samsung Advanced Institute of Technology), Samsung Electronics
Verified email at
Cited by
Cited by
Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
E Lee, D Kang, JC Lee, CJ Kim, H Lim
US Patent 8,618,543, 2013
High-Performance oxide thin film transistors passivated by various gas plasmas
S Kim, J Park, C Kim, S Kim, I Song, H Yin, J Lee, E Lee, Y Park
The Electrochemical Society, 214th ECS Meeting, 1, 2008
Two series oxide resistors applicable to high speed and high density nonvolatile memory
MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ...
Advanced Materials 19 (22), 3919-3923, 2007
Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
S Jeon, SE Ahn, I Song, CJ Kim, UI Chung, E Lee, I Yoo, A Nathan, S Lee, ...
Nature materials 11 (4), 301-305, 2012
A flexible bimodal sensor array for simultaneous sensing of pressure and temperature
NT Tien, S Jeon, DI Kim, TQ Trung, M Jang, BU Hwang, KE Byun, J Bae, ...
Advanced Materials 26 (5), 796-804, 2014
Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
CJ Kim, S Kim, JH Lee, JS Park, S Kim, J Park, E Lee, J Lee, Y Park, ...
Applied Physics Letters 95 (25), 2009
Quantification of microstructural features in α/β titanium alloys
J Tiley, T Searles, E Lee, S Kar, R Banerjee, JC Russ, HL Fraser
Materials Science and Engineering: A 372 (1-2), 191-198, 2004
Oxide semiconductor, thin film transistor including the same and method of manufacturing a thin film transistor
D Kang, I Song, Y Park, CJ Kim, E Lee, JC Lee
US Patent App. 12/078,706, 2009
Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors
HS Kim, SH Jeon, JS Park, TS Kim, KS Son, JB Seon, SJ Seo, SJ Kim, ...
Scientific reports 3 (1), 1459, 2013
Oxide semiconductors and thin film transistors comprising the same
CJ Kim, E Lee, Y Park, JC Park
US Patent 7,935,964, 2011
High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation
J Park, S Kim, C Kim, S Kim, I Song, H Yin, KK Kim, S Lee, K Hong, J Lee, ...
Applied Physics Letters 93 (5), 2008
Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors
J Park, I Song, S Kim, S Kim, C Kim, J Lee, H Lee, E Lee, H Yin, KK Kim, ...
Applied Physics Letters 93 (5), 2008
Short channel characteristics of gallium–indium–zinc–oxide thin film transistors for three-dimensional stacking memory
I Song, S Kim, H Yin, CJ Kim, J Park, S Kim, HS Choi, E Lee, Y Park
IEEE Electron Device Letters 29 (6), 549-552, 2008
Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor
CJ Kim, I Song, D Kang, Y Park, E Lee
US Patent 7,919,365, 2011
Source/drain series-resistance effects in amorphous gallium–indium zinc-oxide thin film transistors
J Park, C Kim, S Kim, I Song, S Kim, D Kang, H Lim, H Yin, R Jung, E Lee, ...
IEEE Electron Device Letters 29 (8), 879-881, 2008
Microstructural visualization of compositional changes induced by transition metal dissolution in Ni-rich layered cathode materials by high-resolution particle analysis
DS Ko, JH Park, S Park, YN Ham, SJ Ahn, JH Park, HN Han, E Lee, ...
Nano energy 56, 434-442, 2019
180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications
S Jeon, S Park, I Song, JH Hur, J Park, S Kim, S Kim, H Yin, E Lee, S Ahn, ...
2010 International Electron Devices Meeting, 21.3. 1-21.3. 4, 2010
Direct observations and analyses of dislocation substructures in the α phase of an α/β Ti-alloy formed by nanoindentation
GB Viswanathan, E Lee, DM Maher, S Banerjee, HL Fraser
Acta materialia 53 (19), 5101-5115, 2005
Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
E Lee, A Benayad, T Shin, HI Lee, DS Ko, TS Kim, KS Son, M Ryu, S Jeon, ...
Scientific reports 4 (1), 4948, 2014
Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities
B Hwang, Y An, H Lee, E Lee, S Becker, YH Kim, H Kim
Scientific reports 7 (1), 41336, 2017
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