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Takanori Mimura
Takanori Mimura
Assistant Professor, Gakushuin University
Verified email at gakushuin.ac.jp
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Cited by
Year
Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films
T Shimizu, T Mimura, T Kiguchi, T Shiraishi, T Konno, Y Katsuya, ...
Applied Physics Letters 113 (21), 2018
812018
Ferroelectricity in YO1. 5-HfO2 films around 1 μm in thickness
T Mimura, T Shimizu, H Funakubo
Applied Physics Letters 115 (3), 2019
752019
Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films
T Mimura, T Shimizu, H Uchida, O Sakata, H Funakubo
Applied Physics Letters 113 (10), 2018
562018
Effects of heat treatment and in situ high-temperature X-ray diffraction study on the formation of ferroelectric epitaxial Y-doped HfO2 film
T Mimura, T Shimizu, T Kiguchi, A Akama, TJ Konno, Y Katsuya, O Sakata, ...
Japanese Journal of Applied Physics 58 (SB), SBBB09, 2019
402019
Origin of ferroelectric phase stabilization via the clamping effect in ferroelectric hafnium zirconium oxide thin films
SS Fields, T Cai, ST Jaszewski, A Salanova, T Mimura, HH Heinrich, ...
Advanced Electronic Materials 8 (12), 2200601, 2022
382022
Comprehensive Study on the Kinetic Formation of the Orthorhombic Ferroelectric Phase in Epitaxial Y-Doped Ferroelectric HfO2 Thin Films
Y Tashiro, T Shimizu, T Mimura, H Funakubo
ACS Applied Electronic Materials 3 (7), 3123-3130, 2021
382021
Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method
T Mimura, T Shimizu, H Uchida, H Funakubo
Applied Physics Letters 116 (6), 2020
372020
Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing
T Mimura, K Katayama, T Shimizu, H Uchida, T Kiguchi, A Akama, ...
Applied Physics Letters 109 (5), 2016
372016
Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO2 Thin Film Capacitors
P Buragohain, A Erickson, T Mimura, T Shimizu, H Funakubo, ...
Advanced Functional Materials 32 (9), 2108876, 2022
362022
Observation of solid-state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO3)
K Aryana, JA Tomko, R Gao, ER Hoglund, T Mimura, S Makarem, ...
Nature communications 13 (1), 1573, 2022
352022
Electric‐Field‐Induced Ferroelectricity in 5%Y‐doped Hf0.5Zr0.5O2: Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase
T Shimizu, Y Tashiro, T Mimura, T Kiguchi, T Shiraishi, TJ Konnno, ...
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2000589, 2021
302021
Thickness-and orientation-dependences of Curie temperature in ferroelectric epitaxial Y doped HfO2 films
T Mimura, T Shimizu, Y Katsuya, O Sakata, H Funakubo
Japanese Journal of Applied Physics 59 (SG), SGGB04, 2020
282020
Wake-up and fatigue mechanisms in ferroelectric Hf0. 5Zr0. 5O2 films with symmetric RuO2 electrodes
SS Fields, SW Smith, ST Jaszewski, T Mimura, DA Dickie, G Esteves, ...
Journal of Applied Physics 130 (13), 2021
272021
Large thermal hysteresis of ferroelectric transition in HfO2-based ferroelectric films
T Mimura, T Shimizu, O Sakata, H Funakubo
Applied Physics Letters 118 (11), 2021
272021
Epitaxial ferroelectric Y-doped HfO2 film grown by the RF magnetron sputtering
T Suzuki, T Shimizu, T Mimura, H Uchida, H Funakubo
Japanese Journal of Applied Physics 57 (11S), 11UF15, 2018
242018
Ferroelectricity in hafnia controlled via surface electrochemical state
KP Kelley, AN Morozovska, EA Eliseev, Y Liu, SS Fields, ST Jaszewski, ...
Nature Materials 22 (9), 1144-1151, 2023
212023
Preparation of near-1-Ám-thick {100}-oriented epitaxial Y-doped HfO2 ferroelectric films on (100) Si substrates by a radio-frequency magnetron sputtering method
R Shimura, T Mimura, T Shimizu, Y Tanaka, Y Inoue, H Funakubo
Journal of the Ceramic Society of Japan 128 (8), 539-543, 2020
202020
Thickness dependence of phase stability in epitaxial films
T Mimura, T Shimizu, O Sakata, H Funakubo
Physical Review Materials 5 (11), 114407, 2021
192021
Preparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111) Pt/TiO x/SiO2/(001) Si substrates by a sputtering method and their ferroelectric and piezoelectric properties
R Shimura, T Mimura, A Tateyama, T Shimizu, T Yamada, Y Tanaka, ...
Japanese Journal of Applied Physics 60 (3), 031009, 2021
152021
Exploring leakage in dielectric films via automated experiments in scanning probe microscopy
Y Liu, SS Fields, T Mimura, KP Kelley, S Trolier-McKinstry, JF Ihlefeld, ...
Applied Physics Letters 120 (18), 2022
72022
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