Vibhu Jindal

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F. Shadi Shahedipour-SandvikSUNY College of Nanoscale Science and EngineeringVerified email at sunypoly.edu
Neeraj TripathiOnouremVerified email at onourem.com
Muhammad JamilSUNY, Lehigh University, Georgia Tech, Crystal ISVerified email at irwise.com
Greg DenbeauxSUNY Albany, College of Nanotechnology, Science, and EngineeringVerified email at albany.edu
Kenneth A. GoldbergOptical Physicist, Advanced Light Source, Lawrence Berkeley National LaboratoryVerified email at lbl.gov
Mihir UpadhyayaTechnology Development Engineer, Intel Corp.Verified email at intel.com
Iacopo MochiPaul Scherrer InstitutVerified email at psi.ch
Suchi GuhaProfessor of Physics, University of Missouri, ColumbiaVerified email at missouri.edu
Nathaniel C. CadyEmpire Innovation Professor, SUNY Polytechnic InstituteVerified email at sunypoly.edu
Rashi GargGlobal FoundriesVerified email at globalfoundries.com
Yashdeep KhopkarApplied MaterialsVerified email at amat.com
Lei SunGlobalfoundries, University of Rochester, Nankai UniversityVerified email at globalfoundries.com
Ravikiran AttotaDeputy Dir., Nanotechnology Core Facility, FDA/NCTRVerified email at fda.hhs.gov
Jacques KoolsEncapsulix SASVerified email at encapsulix.com
Alexander N. CartwrightPresident, University of Central FloridaVerified email at ucf.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
Alexey VertVerified email at sematech.org
Xianan Cao (X. A. Cao)West Virginia UniversityVerified email at mix.wvu.edu
Thomas CardinalRensselaer Polytechnic InstituteVerified email at rpi.edu
Michael A ReshchikovProfessor of Physics, Virginia Commonwealth UniversityVerified email at vcu.edu

Vibhu Jindal

Applied Materials

Verified email at amat.com

Semiconductor EUV Lithography Mask Thin film Failure Analysis


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes V Jindal, F Shahedipour-Sandvik Journal of Applied Physics 106 (8), 2009	125	2009
Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN V Jindal, F Shahedipour-Sandvik Journal of Applied Physics 105 (8), 2009	105	2009
Development of strain reduced GaN on Si (111) by substrate engineering M Jamil, JR Grandusky, V Jindal, F Shahedipour-Sandvik, S Guha, M Arif Applied Physics Letters 87 (8), 2005	66	2005
Extreme ultraviolet mask blank with alloy absorber and method of manufacture V Jindal US Patent 10,877,368, 2020	44	2020
Extreme ultraviolet mask blank with multilayer absorber and method of manufacture V Jindal US Patent 10,747,102, 2020	42	2020
Mechanism of large area dislocation defect reduction in GaN layers on AlN∕ Si (111) by substrate engineering M Jamil, JR Grandusky, V Jindal, N Tripathi, F Shahedipour-Sandvik Journal of Applied Physics 102 (2), 2007	39	2007
Direct immobilization and hybridization of DNA on group III nitride semiconductors X Xu, V Jindal, F Shahedipour-Sandvik, M Bergkvist, NC Cady Applied Surface Science 255 (11), 5905-5909, 2009	36	2009
EUV mask defects and their removal A Rastegar, V Jindal 28th European Mask and Lithography Conference 8352, 306-317, 2012	34	2012
Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride V Jindal, F Shahedipour-Sandvik Journal of Applied Physics 107 (5), 2010	34	2010
Physical vapor deposition chamber with static magnet assembly and methods of sputtering S Behara, S Bhat, V Jindal US Patent 10,504,705, 2019	32	2019
Nanocrystalline gold and gold–palladium as effective catalysts for selective oxidation J Edwards, P Landon, AF Carley, AA Herzing, M Watanabe, CJ Kiely, ... Journal of materials research 22 (4), 831-837, 2007	29	2007
Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers JR Grandusky, V Jindal, N Tripathi, F Shahedipour-Sandvik, H Lu, ... Journal of crystal growth 307 (2), 309-314, 2007	27	2007
Extreme ultraviolet mask blank with multilayer absorber and method of manufacture V Jindal US Patent 11,022,876, 2021	24	2021
Modeling the EUV multilayer deposition process on EUV blanks V Jindal, P Kearney, J Harris-Jones, A Hayes, J Kools Extreme Ultraviolet (EUV) Lithography II 7969, 450-458, 2011	20	2011
Density functional calculations of the strain effects on binding energies and adatom diffusion on (0 0 0 1) GaN surfaces JR Grandusky, V Jindal, JE Raynolds, S Guha, F Shahedipour-Sandvik Materials Science and Engineering: B 158 (1-3), 13-18, 2009	17	2009
Actinic review of EUV masks: status and recent results of the AIMS EUV system MR Weiss, D Hellweg, M Koch, JH Peters, S Perlitz, A Garetto, ... Extreme Ultraviolet (EUV) Lithography VI 9422, 395-403, 2015	15	2015
Selective area heteroepitaxy of low dimensional a ‐plane and c ‐plane InGaN nanostructures using pulsed MOCVD V Jindal, N Tripathi, M Tungare, O Paschos, P Haldar, ... physica status solidi c 5 (6), 1709-1711, 2008	14	2008
Extreme ultraviolet mask absorber materials S Liu, V Jindal US Patent App. 16/877,962, 2020	13	2020
Inspection and compositional analysis of sub-20 nm EUV mask blank defects by thin film decoration technique V Jindal, A John, J Harris-Jones, P Kearney, A Antohe, E Stinzianni, ... Extreme Ultraviolet (EUV) Lithography IV 8679, 478-487, 2013	13	2013
Inspecting mask defects with through-focus scanning optical microscopy R Attota, V Jindal SPIE newsroom 4964, 2013	12	2013

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