| Implanting germanium into graphene M Tripathi, A Markevich, R Böttger, S Facsko, E Besley, J Kotakoski, ... ACS nano 12 (5), 4641-4647, 2018 | 102 | 2018 |
| Tailoring the optical properties of atomically-thin WS 2 via ion irradiation L Ma, Y Tan, M Ghorbani-Asl, R Boettger, S Kretschmer, S Zhou, Z Huang, ... Nanoscale 9 (31), 11027-11034, 2017 | 96 | 2017 |
| Ultra-doped n-type germanium thin films for sensing in the mid-infrared S Prucnal, F Liu, M Voelskow, L Vines, L Rebohle, D Lang, Y Berencén, ... Scientific reports 6 (1), 27643, 2016 | 85 | 2016 |
| Lithium Niobate Crystal with Embedded Au Nanoparticles: A New Saturable Absorber for Efficient Mode‐Locking of Ultrafast Laser Pulses at 1 µm C Pang, R Li, Z Li, N Dong, C Cheng, W Nie, R Böttger, S Zhou, J Wang, ... Advanced Optical Materials 6 (16), 1800357, 2018 | 68 | 2018 |
| Plasmonic nanoparticles embedded in single crystals synthesized by gold ion implantation for enhanced optical nonlinearity and efficient Q-switched lasing WJ Nie, YX Zhang, HH Yu, R Li, RY He, NN Dong, J Wang, R Hübner, ... Nanoscale 10 (9), 4228-4236, 2018 | 68 | 2018 |
| Extended Infrared Photoresponse in -Hyperdoped at Room Temperature M Wang, Y Berencén, E García-Hemme, S Prucnal, R Hübner, Y Yuan, ... Physical Review Applied 10 (2), 024054, 2018 | 66 | 2018 |
| Breaking the doping limit in silicon by deep impurities M Wang, A Debernardi, Y Berencén, R Heller, C Xu, Y Yuan, Y Xie, ... Physical Review Applied 11 (5), 054039, 2019 | 62 | 2019 |
| From holes to sponge at irradiated Ge surfaces with increasing ion energy—an effect of defect kinetics? R Böttger, KH Heinig, L Bischoff, B Liedke, S Facsko Applied Physics A 113, 53-59, 2013 | 54 | 2013 |
| Rectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films X Pan, Y Shuai, C Wu, W Luo, X Sun, H Zeng, S Zhou, R Böttger, X Ou, ... Applied Physics Letters 108 (3), 2016 | 46 | 2016 |
| Interplay between localization and magnetism in (Ga, Mn) As and (In, Mn) As Y Yuan, C Xu, R Hübner, R Jakiela, R Böttger, M Helm, M Sawicki, T Dietl, ... Physical Review Materials 1 (5), 054401, 2017 | 37 | 2017 |
| Surface modifications of crystal-ion-sliced LiNbO3 thin films by low energy ion irradiations X Bai, Y Shuai, C Gong, C Wu, W Luo, R Böttger, S Zhou, W Zhang Applied Surface Science 434, 669-673, 2018 | 35 | 2018 |
| Magnetic Properties of Coupled Structures Tailored by Ion Irradiation A Wawro, Z Kurant, M Jakubowski, M Tekielak, A Pietruczik, R Böttger, ... Physical Review Applied 9 (1), 014029, 2018 | 29 | 2018 |
| Tailoring nonlinear optical properties of Bi2Se3 through ion irradiation Y Tan, Z Guo, Z Shang, F Liu, R Böttger, S Zhou, J Shao, X Yu, H Zhang, ... Scientific reports 6 (1), 21799, 2016 | 29 | 2016 |
| Be smart against cancer! A school-based program covering cancer-related risk behavior F Stölzel, N Seidel, S Uhmann, M Baumann, H Berth, J Hoyer, G Ehninger BMC Public Health 14, 1-9, 2014 | 28 | 2014 |
| Defect-Induced Exchange Bias in a Single SrRuO3 Layer C Wang, C Chen, CH Chang, HS Tsai, P Pandey, C Xu, R Böttger, ... ACS applied materials & interfaces 10 (32), 27472-27476, 2018 | 27 | 2018 |
| Joining of two different ceramic nanomaterials for bottom-up fabrication of heterojunction devices MK Rajbhar, P Das, B Satpati, W Möller, S Facsko, R Böttger, N Ramgir, ... Applied Surface Science 478, 651-660, 2019 | 26 | 2019 |
| Precise tuning of the Curie temperature of (Ga, Mn) As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism S Zhou, L Li, Y Yuan, AW Rushforth, L Chen, Y Wang, R Böttger, R Heller, ... Physical Review B 94 (7), 075205, 2016 | 26 | 2016 |
| Nature of Nitrogen Incorporation in BiVO4 Photoanodes through Chemical and Physical Methods R Irani, IY Ahmet, JW Jang, SP Berglund, P Plate, C Höhn, R Böttger, ... Solar RRL 4 (1), 1900290, 2020 | 25 | 2020 |
| From sponge to dot arrays on (100) Ge by increasing the energy of ion impacts R Böttger, L Bischoff, KH Heinig, W Pilz, B Schmidt Journal of Vacuum Science & Technology B 30 (6), 2012 | 25 | 2012 |
| Self-diffusion in amorphous silicon by local bond rearrangements J Kirschbaum, T Teuber, A Donner, M Radek, D Bougeard, R Böttger, ... Physical review letters 120 (22), 225902, 2018 | 23 | 2018 |
Shengqiang ZhouHelmholtz-Zentrum Dresden-Rossendorf, GermanyVerified email at hzdr.de
