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Manus Hayne
Manus Hayne
Verified email at lancaster.ac.uk
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Cited by
Year
Classification and control of the origin of photoluminescence from Si nanocrystals
S Godefroo, M Hayne, M Jivanescu, A Stesmans, M Zacharias, ...
Nature nanotechnology 3 (3), 174-178, 2008
6412008
Photoluminescence of negatively charged excitons in high magnetic fields
M Hayne, CL Jones, R Bogaerts, C Riva, A Usher, FM Peeters, F Herlach, ...
Physical Review B 59 (4), 2927, 1999
1101999
Electron and hole confinement in stacked self-assembled InP quantum dots
M Hayne, R Provoost, MK Zundel, YM Manz, K Eberl, VV Moshchalkov
Physical Review B 62 (15), 10324, 2000
852000
Raman scattering in cluster-deposited nanogranular silicon films
MJ Konstantinović, S Bersier, X Wang, M Hayne, P Lievens, RE Silverans, ...
Physical Review B 66 (16), 161311, 2002
792002
Effective masses in high-mobility 2D electron gas structures
PT Coleridge, M Hayne, P Zawadzki, AS Sachrajda
Surface science 361, 560-563, 1996
771996
Electron localization by self-assembled GaSb/GaAs quantum dots
M Hayne, J Maes, S Bersier, VV Moshchalkov, A Schliwa, L Müller-Kirsch, ...
Applied Physics Letters 82 (24), 4355-4357, 2003
702003
Electron wave-function spillover in self-assembled quantum wires
J Maes, M Hayne, Y Sidor, B Partoens, FM Peeters, Y González, ...
Physical Review B 70 (15), 155311, 2004
592004
High-field magnetoexcitons in unstrained quantum dots
Y Sidor, B Partoens, FM Peeters, N Schildermans, M Hayne, ...
Physical Review B 73 (15), 155334, 2006
562006
The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory
M Hayne, RJ Young, EP Smakman, T Nowozin, P Hodgson, JK Garleff, ...
Journal of Physics D: Applied Physics 46 (26), 264001, 2013
522013
Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots
T Nowozin, A Marent, L Bonato, A Schliwa, D Bimberg, EP Smakman, ...
Physical Review B 86 (3), 035305, 2012
502012
Charge separation and temperature-induced carrier migration in GaInNAs multiple quantum wells
T Nuytten, M Hayne, B Bansal, HY Liu, M Hopkinson, VV Moshchalkov
Physical Review B 84 (4), 045302, 2011
492011
Optical observation of single-carrier charging in type-II quantum ring ensembles
RJ Young, EP Smakman, AM Sánchez, P Hodgson, PM Koenraad, ...
Applied Physics Letters 100 (8), 2012
482012
GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
EP Smakman, JK Garleff, RJ Young, M Hayne, P Rambabu, PM Koenraad
Applied Physics Letters 100 (14), 2012
472012
Magnetophotoluminescence of negatively charged excitons in narrow quantum wells
T Vanhoucke, M Hayne, M Henini, VV Moshchalkov
Physical Review B 63 (12), 125331, 2001
462001
Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs
S Harrison, MP Young, PD Hodgson, RJ Young, M Hayne, L Danos, ...
Physical Review B 93 (8), 085302, 2016
452016
Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings
MA Kamarudin, M Hayne, RJ Young, QD Zhuang, T Ben, SI Molina
Physical Review B 83 (11), 115311, 2011
432011
Extended excitons and compact heliumlike biexcitons in type-II quantum dots
B Bansal, S Godefroo, M Hayne, G Medeiros-Ribeiro, VV Moshchalkov
Physical Review B 80 (20), 205317, 2009
352009
High‐field magneto‐photoluminescence of semiconductor nanostructures
M Hayne, B Bansal
Luminescence 27 (3), 179-196, 2012
342012
GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer
MA Kamarudin, M Hayne, QD Zhuang, O Kolosov, T Nuytten, ...
Journal of physics D: Applied physics 43 (6), 065402, 2010
342010
Photoelectrolysis using type-II semiconductor heterojunctions
S Harrison, M Hayne
Scientific Reports 7 (1), 11638, 2017
322017
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