Advanced photolithographic mask repair using electron beams T Liang, E Frendberg, B Lieberman, A Stivers Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005 | 104 | 2005 |
Progress in extreme ultraviolet mask repair using a focused ion beam T Liang, A Stivers, R Livengood, PY Yan, G Zhang, FC Lo Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 77 | 2000 |
EUV progress toward HVM readiness B Turkot, SL Carson, A Lio, T Liang, M Phillips, B McCool, E Stenehjem, ... Extreme Ultraviolet (EUV) Lithography VII 9776, 9-17, 2016 | 76 | 2016 |
EUVL defect printability at the 32-nm node EM Gullikson, E Tejnil, T Liang, AR Stivers Emerging Lithographic Technologies VIII 5374, 791-796, 2004 | 59 | 2004 |
Damage-free mask repair using electron-beam-induced chemical reactions T Liang, AR Stivers Emerging Lithographic Technologies VI 4688, 375-384, 2002 | 57 | 2002 |
TaN EUVL mask fabrication and characterization P Yan, G Zhang, A Ma, T Liang Emerging Lithographic Technologies V 4343, 409-414, 2001 | 57 | 2001 |
Inhibiting spontaneous etching of nanoscale electron beam induced etching features: Solutions for nanoscale repair of extreme ultraviolet lithography masks MG Lassiter, T Liang, PD Rack Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 53 | 2008 |
Method of repairing an opaque defect on a mask with electron beam-induced chemical etching T Liang, A Stivers US Patent 6,897,157, 2005 | 51 | 2005 |
Enhanced inspection of extreme ultraviolet mask PY Yan, T Liang, G Zhang US Patent 6,720,118, 2004 | 50 | 2004 |
Methods for repairing an alternating phase-shift mask T Liang US Patent App. 11/028,818, 2006 | 47 | 2006 |
EUV mask absorber characterization and selection P Yan, G Zhang, P Kofron, JE Powers, M Tran, T Liang, AR Stivers, FC Lo Photomask and Next-Generation Lithography Mask Technology VII 4066, 116-123, 2000 | 47 | 2000 |
EUV substrate and blank inspection with confocal microscopy JP Urbach, JFW Cavelaars, H Kusunose, T Liang, AR Stivers 23rd Annual BACUS Symposium on Photomask Technology 5256, 556-565, 2003 | 44 | 2003 |
Evaluation of the capability of a multibeam confocal inspection system for inspection of EUVL mask blanks AR Stivers, T Liang, MJ Penn, B Lieberman, GV Shelden, JA Folta, ... 22nd Annual BACUS Symposium on Photomask Technology 4889, 408-417, 2002 | 43 | 2002 |
Enhanced optical inspectability of patterned EUVL mask T Liang, AR Stivers, P Yan, E Tejnil, G Zhang 21st Annual BACUS Symposium on Photomask Technology 4562, 288-296, 2002 | 37 | 2002 |
Demonstration of damage-free mask repair using electron beam-induced processes T Liang, AR Stivers, M Penn, D Bald, C Sethi, V Boegli, M Budach, ... Photomask and Next-Generation Lithography Mask Technology XI 5446, 291-300, 2004 | 35 | 2004 |
Chemical effect of dry and wet cleaning of the Ru protective layer of the extreme ultraviolet lithography reflector L Belau, JY Park, T Liang, H Seo, GA Somorjai Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 34 | 2009 |
Exposing extreme ultraviolet lithography at Intel J Roberts, T Bacuita, RL Bristol, H Cao, M Chandhok, SH Lee, M Leeson, ... Microelectronic engineering 83 (4-9), 672-675, 2006 | 34 | 2006 |
Helium ion microscope invasiveness and imaging study for semiconductor applications RH Livengood, Y Greenzweig, T Liang, M Grumski Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 33 | 2007 |
EUV mask pattern defect printability T Liang, G Zhang, P Naulleau, A Myers, SJ Park, A Stivers, G Vandentop Photomask and Next-Generation Lithography Mask Technology XIII 6283, 122-133, 2006 | 29 | 2006 |
Inspection of EUV reticles DW Pettibone, A Veldman, T Liang, AR Stivers, PJS Mangat, B Lu, ... Emerging Lithographic Technologies VI 4688, 363-374, 2002 | 27 | 2002 |