Flexible electronics: materials and applications WS Wong, A Salleo Springer Science & Business Media, 2009 | 909 | 2009 |
Separation of thin films from transparent substrates by selective optical processing NW Cheung, TD Sands, WS Wong US Patent 6,071,795, 2000 | 806 | 2000 |
Damage-free separation of GaN thin films from sapphire substrates WS Wong, T Sands, NW Cheung Applied Physics Letters 72 (5), 599-601, 1998 | 533 | 1998 |
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ... Applied physics letters 75 (10), 1360-1362, 1999 | 469 | 1999 |
All jet-printed polymer thin-film transistor active-matrix backplanes AC Arias, SE Ready, R Lujan, WS Wong, KE Paul, A Salleo, ML Chabinyc, ... Applied Physics Letters 85 (15), 3304-3306, 2004 | 358 | 2004 |
Flexible image sensor array with bulk heterojunction organic photodiode TN Ng, WS Wong, ML Chabinyc, S Sambandan, RA Street Applied Physics Letters 92 (21), 2008 | 341 | 2008 |
Separation of thin films from transparent substrates by selective optical processing NW Cheung, TD Sands, WS Wong US Patent 6,420,242, 2002 | 325 | 2002 |
3D printing: an emerging tool for novel microfluidics and lab-on-a-chip applications AA Yazdi, A Popma, W Wong, T Nguyen, Y Pan, J Xu Microfluidics and Nanofluidics 20, 1-18, 2016 | 310 | 2016 |
Jet printing flexible displays RA Street, WS Wong, SE Ready, ML Chabinyc, AC Arias, S Limb, ... Materials Today 9 (4), 32-37, 2006 | 294 | 2006 |
light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ... Applied Physics Letters 77 (18), 2822-2824, 2000 | 256 | 2000 |
Additive jet printing of polymer thin-film transistors KE Paul, WS Wong, SE Ready, RA Street Applied Physics Letters 83 (10), 2070-2072, 2003 | 254 | 2003 |
Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials NW Cheung, TD Sands, WS Wong US Patent 6,335,263, 2002 | 227 | 2002 |
Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials NW Cheung, TD Sands, WS Wong US Patent 6,335,263, 2002 | 227 | 2002 |
Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials NW Cheung, TD Sands, WS Wong US Patent 6,335,263, 2002 | 227 | 2002 |
Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials WS Wong, MA Kneissl US Patent 6,562,648, 2003 | 196 | 2003 |
Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials WS Wong, MA Kneissl US Patent 6,562,648, 2003 | 196 | 2003 |
Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials WS Wong, MA Kneissl US Patent 6,562,648, 2003 | 196 | 2003 |
Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate P Perlin, L Mattos, NA Shapiro, J Kruger, WS Wong, T Sands, NW Cheung, ... Journal of Applied Physics 85 (4), 2385-2389, 1999 | 138 | 1999 |
The de novo cytosine methyltransferase DRM2 requires intact UBA domains and a catalytically mutated paralog DRM3 during RNA–directed DNA methylation in Arabidopsis thaliana IR Henderson, A Deleris, W Wong, X Zhong, HG Chin, GA Horwitz, ... PLoS genetics 6 (10), e1001182, 2010 | 133 | 2010 |
Superlattice strain relief layer for semiconductor devices WS Wong, MA Kneissl, Z Yang, M Teepe, C Knollenberg US Patent 7,547,925, 2009 | 130 | 2009 |